型号 功能描述 生产厂家 企业 LOGO 操作
71V3556SA133BQ

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

71V3556SA133BQ

封装/外壳:165-TBGA 包装:托盘 描述:IC SRAM 4.5MBIT PAR 165CABGA 集成电路(IC) 存储器

ETC

知名厂家

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

封装/外壳:165-TBGA 包装:托盘 描述:IC SRAM 4.5MBIT PAR 165CABGA 集成电路(IC) 存储器

ETC

知名厂家

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high performance system speed - 166 MHz (x36) (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Pos

RENESAS

瑞萨

更新时间:2026-1-5 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT
24+
BGA
5000
全新原装正品,现货销售
IDT
24+
BGA
8000
新到现货,只做全新原装正品
24+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
RENESAS(瑞萨)/IDT
2447
CABGA-165(13x15)
315000
136个/托盘一级代理专营品牌!原装正品,优势现货,长
Renesas
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
Renesas
25+
电联咨询
7800
公司现货,提供拆样技术支持
IDT
25+
BGA
8000
只有原装
IDT
26+
BGA
12000
原装,正品
IDT, Integrated Device Technol
24+
165-CABGA(13x15)
56200
一级代理/放心采购
IDT
原厂封装
9800
原装进口公司现货假一赔百

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