型号 功能描述 生产厂家 企业 LOGO 操作
71V2576SA150PF

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

更新时间:2025-12-31 12:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT
23+
QFP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
RENESAS(瑞萨)/IDT
2021+
TQFP-64(10x10)
499
RENESAS(瑞萨)/IDT
24+
TQFP64(10x10)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
24+
N/A
60000
一级代理-主营优势-实惠价格-不悔选择
IDT/RENESAS
22+
PPG64
24500
瑞萨全系列在售
IDT,
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
RENESAS(瑞萨)/IDT
2447
TQFP-64(10x10)
315000
40个/托盘一级代理专营品牌!原装正品,优势现货,长
Renesas
25+
电联咨询
7800
公司现货,提供拆样技术支持
IDT
99+
TQFP-64P
220
普通
IDT, Integrated Device Technol
24+
64-TQFP(10x10)
56200
一级代理/放心采购

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