型号 功能描述 生产厂家 企业 LOGO 操作
71V2576SA133PF

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

RENESAS

瑞萨

更新时间:2025-12-31 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
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24+
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现货供应,当天可交货!免费送样,原厂技术支持!!!
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25+
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IDT,
25+
25000
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ALCATEL
16+
TSOP32
4000
进口原装现货/价格优势!
IDT/RENESAS
22+
PPG64
24500
瑞萨全系列在售
RENESAS(瑞萨)/IDT
2447
TQFP-64(10x10)
315000
40个/托盘一级代理专营品牌!原装正品,优势现货,长
IDT
99+
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220
普通
RENESAS(瑞萨)/IDT
2021+
TQFP-64(10x10)
499
IDT
236
IDT
23+
QFP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、

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