128K X 36 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36 memory configuration ◆ Supports high system speed: Commercial and Industrial: – 200MHz 3.1ns clock access time – 183MHz 3.3ns clock access time – 166MHz 3.5ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global wr

封装/外壳：100-LQFP 包装：托盘 描述：IC SRAM 4.5MBIT PARALLEL 100TQFP 集成电路（IC） 存储器

128K X 36 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36 memory configuration ◆ Supports high system speed: Commercial and Industrial: – 200MHz 3.1ns clock access time – 183MHz 3.3ns clock access time – 166MHz 3.5ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global wr

封装/外壳：100-LQFP 包装：托盘 描述：IC SRAM 4.5MBIT PARALLEL 100TQFP 集成电路（IC） 存储器

128K X 36 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36 memory configuration ◆ Supports high system speed: Commercial and Industrial: – 200MHz 3.1ns clock access time – 183MHz 3.3ns clock access time – 166MHz 3.5ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global wr

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

文件：513.179 Kbytes Page：23 Pages

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

文件：513.179 Kbytes Page：23 Pages

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

文件：513.179 Kbytes Page：23 Pages