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71V2556SA价格

参考价格:¥53.3734

型号:71V2556SA133BGI 品牌:IDT 备注:这里有71V2556SA多少钱,2026年最近7天走势,今日出价,今日竞价,71V2556SA批发/采购报价,71V2556SA行情走势销售排行榜,71V2556SA报价。
型号 功能描述 生产厂家 企业 LOGO 操作
71V2556SA

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 166 MHz (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 166 MHz (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 166 MHz (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 166 MHz (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 166 MHz (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 166 MHz (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 166 MHz (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 166 MHz (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 166 MHz (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 166 MHz (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 166 MHz (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 166 MHz (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 166 MHz (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 166 MHz (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 128K x 36 memory configurations ◆ Supports high performance system speed - 166 MHz (3.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRI

RENESAS

瑞萨

封装/外壳:119-BGA 包装:托盘 描述:IC SRAM 4.5MBIT PARALLEL 119PBGA 集成电路(IC) 存储器

RENESAS

瑞萨

封装/外壳:119-BGA 包装:托盘 描述:IC SRAM 4.5MBIT PARALLEL 119PBGA 集成电路(IC) 存储器

RENESAS

瑞萨

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

文件:1.01995 Mbytes Page:28 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

文件:1.01995 Mbytes Page:28 Pages

IDT

3.3V Synchronous ZBT SRAMs

文件:293.35 Kbytes Page:25 Pages

IDT

更新时间:2026-5-24 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Renesas Electronics Corporatio
24+25+
16500
全新原厂原装现货!受权代理!可送样可提供技术支持!
RENESAS(瑞萨)/IDT
2447
PBGA-119(14x22)
315000
84个/托盘一级代理专营品牌!原装正品,优势现货,长
RENESAS(瑞萨)/IDT
24+
PBGA-119(14x22)
16508
原装正品现货支持实单
IDT
2318+
BGA
4580
十年专业专注 优势渠道商正品保证公司现货
IDT, Integrated Device Technol
21+
90-VFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
26+
N/A
73000
一级代理-主营优势-实惠价格-不悔选择
IDT
23+
BGA
50000
全新原装正品现货,支持订货
Renesas
25+
电联咨询
7800
公司现货,提供拆样技术支持
IDT, Integrated Device Technol
24+
119-PBGA(14x22)
56200
一级代理/放心采购
IDT
23+
NA
10826
专做原装正品,假一罚百!

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