1M x 18 2.5V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Flow-Through Outputs

Features ◆ 1M x 18 memory configuration ◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W (READ/WRITE)

封装/外壳：119-BGA 包装：卷带（TR） 描述：IC SRAM 18MBIT PARALLEL 119PBGA 集成电路（IC） 存储器

2.5V Synchronous ZBT SRAM 2.5V I/O, Burst Counter Flow-Through Outputs

文件：230.47 Kbytes Page：23 Pages