位置：首页 > IC中文资料 > 70T633S10BFGI
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
70T633S10BFGI | HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
70T633S10BFGI | HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM 文件：437.45 Kbytes Page：27 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 |  | |
70T633S10BFGI | ASYNCHRONOUSDUAL-PORTSTATICRAM 文件：251.71 Kbytes Page：27 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | |
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
ASYNCHRONOUSDUAL-PORTSTATICRAM 文件：251.71 Kbytes Page：27 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM 文件：437.45 Kbytes Page：27 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
ASYNCHRONOUSDUAL-PORTSTATICRAM 文件：251.71 Kbytes Page：27 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM 文件：437.45 Kbytes Page：27 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM 文件：437.45 Kbytes Page：27 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT, Integrated Device Technol |
21+ |
208-CABGA(15x15) |
56200 |
一级代理/放心采购 |
|||
RENESAS(瑞萨)/IDT |
23+ |
CABGA208(15x15) |
6000 |
||||
RENESAS(瑞萨)/IDT |
2021+ |
CABGA-208(15x15) |
499 |
||||
RENESAS(瑞萨)/IDT |
1921+ |
CABGA-208(15x15) |
3575 |
向鸿仓库现货,优势绝对的原装! |
|||
RENESAS(瑞萨)/IDT |
23+ |
CABGA208(15x15) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
Renesas Electronics America In |
24+ |
208-LFBGA |
9350 |
独立分销商,公司只做原装，诚心经营,免费试样正品保证 |
|||
RENESAS(瑞萨)/IDT |
2117+ |
CABGA-208(15x15) |
315000 |
7个/托盘一级代理专营品牌!原装正品,优势现货,长期 |
|||
RENESAS(瑞萨电子) |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
|||
IDT |
2019 |
SMD |
324554 |
原装进口现货 |
|||
IDT, Integrated Device Technol |
21+ |
165-LBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
70T633S10BFGI芯片相关品牌
70T633S10BFGI规格书下载地址
70T633S10BFGI参数引脚图相关
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70T633S10BFGI数据表相关新闻
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DdatasheetPDF页码索引
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