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200V, 7.5A Enhancement Mode GaN Power Transistor

Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo

RENESAS

瑞萨

200V, 7.5A Enhancement Mode GaN Power Transistor

Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo

RENESAS

瑞萨

200V, 7.5A Enhancement Mode GaN Power Transistor

Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo

RENESAS

瑞萨

200V, 7.5A Enhancement Mode GaN Power Transistor

Features • Very low rDS(ON) 45mΩ (typical) • Ultra low total gate charge 2.5nC (typical) • SEE hardness (see SEE report for details) • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg • ISL70024SEH radiation acceptance (see TID report) • High dose rate (50-300rad(Si)/s): 100krad(Si) • Lo

RENESAS

瑞萨

SI-70024

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更新时间:2026-3-17 22:58:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTERSIL
2016+
TSOP-5
6000
全新原装现货,量大价优,公司可售样!
INTERSI
24+
SOP-8
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
MAXIM/美信
2026+
QFP-44
54648
百分百原装现货 实单必成
MAXIM
24+
QFP-44
9000
只做原装正品现货 欢迎来电查询15919825718
RENESAS
25+
SOP
15000
瑞萨全系列在售,大代理渠道直供
RENESAS
22+
SOP
6000
专业配单,原装正品假一罚十,代理渠道价格优
ISL
05+
原厂原装
4330
只做全新原装真实现货供应
INTERSIL
22+
CFOP
12245
现货,原厂原装假一罚十!
INTERSIL
2402+
QFP
8324
原装正品!实单价优!
INTERSI
25+
N/A
90000
一级代理商进口原装现货、价格合理

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