型号 功能描述 生产厂家 企业 LOGO 操作
6N60-P

N-CHANNEL POWER MOSFET

文件:264.93 Kbytes Page:7 Pages

UTC

友顺

6N60-P

6.2A, 600V N-CHANNEL  POWER MOSFET

UTC

友顺

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

UTC

友顺

Avalanche Energy Specified

DESCRITION · Designed for high efficiency switch mode power supply. FEATURES · Drain Current –ID= 6A@ TC=25℃ · Drain Source Voltage-: VDSS= 600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 1.2Ω (Max) · Avalanche Energy Specified · Fast Switching · Simple Drive Requirements

ISC

无锡固电

N-Channel 600V (D-S) Power MOSFET

文件:1.0803 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-CHANNEL POWER MOSFET

文件:460.3 Kbytes Page:6 Pages

ZSELEC

淄博圣诺

N-Channel Power MOSFET

文件:486.21 Kbytes Page:10 Pages

NELLSEMI

尼尔半导体

更新时间:2025-12-28 16:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
470
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VBsemi
24+
TO220
9000
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ST
23+
TO220F
16900
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ST/进口原
17+
TO-220F
6200
HHW
18+
TO220
85600
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JH(晶恒)
2447
ITO-220AB
105000
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ST
20+
TO-220F
38560
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VBsemi
21+
TO220
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
UTC/友顺
2022+
TO-220F
50000
原厂代理 终端免费提供样品
VBsemi
23+
TO220
50000
全新原装正品现货,支持订货

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