丝印代码：6A085H；600W Transient Voltage Suppressor

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VOLTAGE RANGE 50 to 1000 Volts CURRENT 6.0 Amperes

FEATURES * Low cost * Low leakage * Low forward voltage drop * High current capability * High surge current capability

General Purpose Silicon Rectifiers

Voltage: 50 to 1000 V Current: 6.0 A RoHS Device Features - Low cost construction. - Diffused Junction. - Low forward voltage drop. - High current capability.

封装/外壳：R-6，轴向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 800V 6A R6 分立半导体产品 二极管 - 整流器 - 单

General Purpose Rectifier

封装/外壳：R-6，轴向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 800V 6A R6 分立半导体产品 二极管 - 整流器 - 单

PLASTIC SILICON RECTIFIERS

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60V SOT223 N-channel enhancement mode MOSFET

Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low thres

60V SOT223 N-channel enhancement mode MOSFET

Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low thres

60V SOT223 N-channel enhancement mode MOSFET

Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low thres

60V SOT223 N-channel enhancement mode MOSFET

Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low thres

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This new generation MOSFET has been designed to minimize the on state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Backlighting • DC-DC Converters • Power management funct