丝印代码：60N100；N-Channel Enhancement Mode Power MOSFET

General Features Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation VDS =100V,ID =60A RDS(ON) =9.2mΩ(typical

NPT-Trench IGBT

文件：682.03 Kbytes Page：7 Pages

Electrical Characteristics of IGBT

General Description Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications Features • High Speed Switching • Low

NPT-Trench IGBT

文件：682.03 Kbytes Page：7 Pages

1000 V, 60 A NPT Trench IGBT

文件：394.77 Kbytes Page：7 Pages

1000 V, 60 A NPT Trench IGBT

文件：394.77 Kbytes Page：7 Pages