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型号 功能描述 生产厂家 企业 LOGO 操作
5N65

5A , 650V   N-CHANNEL   POWER MOSFET

The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor co • RDS(ON) = 2.4 Ω @VGS = 10 V \n• Low Reverse Transfer Capacitance ( CRSS = Typical 6.5 pF ) \n• Avalanche Energy Specified \n• Improved dv/dt Capability, High Ruggedness;

UTC

友顺

5N65

N-channel power MOS tube

文件:560.97 Kbytes Page:9 Pages

UMW

友台半导体

5N65

5A, 650V N-CHANNEL POWER MOSFET

文件:253.64 Kbytes Page:6 Pages

UTC

友顺

5N65

N-CHANNEL POWER MOSFET

文件:2.62027 Mbytes Page:7 Pages

SUNMATE

森美特

5N65

Fast Switching Speed

文件:53.7 Kbytes Page:2 Pages

ISC

无锡固电

5N65

N-CHANNEL MOSFET

文件:500.1 Kbytes Page:6 Pages

ZSELEC

淄博圣诺

5N65

650V N-Channel Power MOSFET

文件:2.22425 Mbytes Page:9 Pages

DYELEC

迪一电子

5N65

N-Channel Power MOSFET

文件:400 Kbytes Page:8 Pages

NELLSEMI

尼尔半导体

丝印代码:5N65M6;N-channel 650 V, 1.15 Ω typ., 4 A MDmesh™ M6 Power MOSFET in a DPAK package

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Applications  Switching applications Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well

STMICROELECTRONICS

意法半导体

丝印代码:5N65M6;N-channel 650 V, 1.15 Ω typ., 4 A MDmesh™ M6 Power MOSFET in a TO-220FP package

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Applications  Switching applications Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well

STMICROELECTRONICS

意法半导体

丝印代码:5N650;N-Channel Super Junction Power MOSFET

文件:525.25 Kbytes Page:8 Pages

RECTRON

丽正

丝印代码:5N650;N-Channel Super Junction Power MOSFET

文件:525.25 Kbytes Page:8 Pages

RECTRON

丽正

丝印代码:5N65AT;5A 650V N-channel enhancement mode field effect transistor

文件:1.0098 Mbytes Page:7 Pages

YFWDIODE

佑风微

丝印代码:5N65AF;5A 650V N-channel enhancement mode field effect transistor

文件:1.0098 Mbytes Page:7 Pages

YFWDIODE

佑风微

丝印代码:5N65AS;5A 650V N-channel enhancement mode field effect transistor

文件:1.0098 Mbytes Page:7 Pages

YFWDIODE

佑风微

丝印代码:5N65AS;5A 650V N-channel enhancement mode field effect transistor

文件:1.0098 Mbytes Page:7 Pages

YFWDIODE

佑风微

丝印代码:5N65AMJ;5A 650V N-channel enhancement mode field effect transistor

文件:1.0098 Mbytes Page:7 Pages

YFWDIODE

佑风微

丝印代码:5N65AD;5A 650V N-channel enhancement mode field effect transistor

文件:1.0098 Mbytes Page:7 Pages

YFWDIODE

佑风微

5A, 650V N-CHANNEL POWER MOSFET

The UTC 5N65-CQ is a high voltage power MOSFET designedto have better characteristics, such as fast switching time, low gatecharge, low on-state resistance and high rugged avalanchecharacteristics. This power MOSFET is usually used in high speedswitching applications of switching power supplies and RDS(ON) < 2.2 Ω @ VGS = 10 V, ID = 2.5 A Fast switching capability Avalanche energy tested Improved dv/dt capability, high ruggedness;

UTC

友顺

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:270.24 Kbytes Page:7 Pages

UTC

友顺

isc N-Channel MOSFET Transistor

文件:165.72 Kbytes Page:2 Pages

ISC

无锡固电

5A 650V N-channel enhancement mode field effect transistor

文件:1.0098 Mbytes Page:7 Pages

YFWDIODE

佑风微

N-CHANNEL POWER MOSFET

文件:2.62027 Mbytes Page:7 Pages

SUNMATE

森美特

N-CHANNEL POWER MOSFET

文件:2.62027 Mbytes Page:7 Pages

SUNMATE

森美特

N-CHANNEL POWER MOSFET

文件:2.62027 Mbytes Page:7 Pages

SUNMATE

森美特

高压MOSFET

PINGWEI

N-Channel 650 V (D-S) MOSFET

文件:1.08753 Mbytes Page:9 Pages

VBSEMI

微碧半导体

5A, 650V N-CHANNEL POWER MOSFET

文件:253.64 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:270.24 Kbytes Page:7 Pages

UTC

友顺

5A, 650V N-CHANNEL POWER MOSFET

文件:253.64 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:270.24 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:270.24 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:270.24 Kbytes Page:7 Pages

UTC

友顺

5A, 650V N-CHANNEL POWER MOSFET

文件:253.64 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:270.24 Kbytes Page:7 Pages

UTC

友顺

5A, 650V N-CHANNEL POWER MOSFET

文件:253.64 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:270.24 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:270.24 Kbytes Page:7 Pages

UTC

友顺

5A, 650V N-CHANNEL POWER MOSFET

文件:253.64 Kbytes Page:6 Pages

UTC

友顺

5A, 650V N-CHANNEL POWER MOSFET

文件:253.64 Kbytes Page:6 Pages

UTC

友顺

5A, 650V N-CHANNEL POWER MOSFET

文件:228.69 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:2.62027 Mbytes Page:7 Pages

SUNMATE

森美特

5A, 650V N-CHANNEL POWER MOSFET

文件:228.69 Kbytes Page:6 Pages

UTC

友顺

5A, 650V N-CHANNEL POWER MOSFET

文件:228.69 Kbytes Page:6 Pages

UTC

友顺

N-Channel MOSFET uses advanced trench technology

文件:1.31308 Mbytes Page:5 Pages

DOINGTER

杜因特

N-Channel 650 V (D-S) MOSFET

文件:1.08659 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:270.24 Kbytes Page:7 Pages

UTC

友顺

5A, 650V N-CHANNEL POWER MOSFET

文件:253.64 Kbytes Page:6 Pages

UTC

友顺

5A, 650V N-CHANNEL POWER MOSFET

文件:253.64 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:270.24 Kbytes Page:7 Pages

UTC

友顺

Power MOSFET

文件:1.06595 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:270.24 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:270.24 Kbytes Page:7 Pages

UTC

友顺

5A, 650V N-CHANNEL POWER MOSFET

文件:253.64 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:270.24 Kbytes Page:7 Pages

UTC

友顺

5A, 650V N-CHANNEL POWER MOSFET

文件:253.64 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:270.24 Kbytes Page:7 Pages

UTC

友顺

N-Channel 650V (D-S) Power MOSFET

文件:1.07718 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:1.07612 Mbytes Page:9 Pages

VBSEMI

微碧半导体

5N65产品属性

  • 类型

    描述

  • Vdss(V):

    650

  • Vgss(V):

    30

  • Id(A):

    5

  • Package:

    TO-220

更新时间:2026-5-22 18:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
UTC/友顺
25+
TO-252
32360
UTC/友顺全新特价5N65KG-TN3-R即刻询购立享优惠#长期有货
UTC/友顺
23+
TO-220F
79999
原厂授权代理,海外优势订货渠道。可提供大量库存,详
25+
TO-220F
35000
原厂现货实单价优
22+
TO-220220F
20000
只做原装
UTC/友顺
25+
TO-220F1
880000
明嘉莱只做原装正品现货
UTC/友顺
21+
TO-220F1
6856
百域芯优势 实单必成 可开13点增值税
UMW 友台
23+
TO-220F
6000
原装正品,实单请联系
PIL
2450+
TO220F
8850
只做原装正品假一赔十为客户做到零风险!!
长电
25+23+
TO-220F
24494
绝对原装正品全新进口深圳现货
华晶
TO-220F
50000
一级代理 原装正品假一罚十价格优势长期供货

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