524,288-Bit (64K x 8) High Performance CMOS EPROM

General Description The FM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG™ EPROM technology for an excellent combination of speed and economy while providing excellent reliability. The FM2

512 Kbit 64Kb x8 UV EPROM and OTP EPROM

SUMMARY DESCRIPTION The M27C512 is a 512 Kbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for applications where fast turn-around and pattern experi mentation are important requirements and is organized as 65536 by 8 bits. F

封装/外壳：6-SMD，无引线 功能：启用/禁用 包装：卷带（TR） 描述：DIFFERENTIAL/SINGLE-ENDED; DUAL 晶体，振荡器，谐振器 引脚可配置/可选择振荡器

512 Kilobit ( 64 K x 8-Bit ) CMOS EPROM Speed options as fast as 55 ns

文件：611.33 Kbytes Page：9 Pages

封装/外壳：6-SMD，无引线 功能：启用/禁用 包装：带 描述：XTAL OSC XO 1.8V 6SMD 晶体，振荡器，谐振器 引脚可配置/可选择振荡器

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These feat

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators ■ RF REGULATOR ■ VERY LOW DROPOUT VOLTAGE : 30mV ■ ULTRA LOW OUTPUT VOLTAGE NOISE ■ HIGH PSRR : 70dB ■ LOW STAND-BY CURRENT : 20µA ■ LOW QUIESCENT CURRENT : 150µA FULL LOAD ■ NO CURRENT IN POWER DOWN

Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.

SUMMARY DESCRIPTION The LRI512 is a contactless memory, powered by an externally transmitted radio wave. It is fully compliant with the ISO15693 recommendation for radio-frequency power and signal interface. The LRI512 contains 512 bits of Electrically Erasable Programmable Memory (EEPROM

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo