BIDW50N65T Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDW50N65T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris

Trench and Field Stop IGBT 650V 50A

Features • High Speed Smooth Switching Device for Hard and Soft Switching • Vce(sat) with Positive Temperature Coefficient • High Ruggedness, Good Thermal Stability • Very Tight Parameter Distribution • Halogen Free. “Green” Device (Note 1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead

Trench and Field Stop IGBT 650V 50A

Features • High Speed Smooth Switching Device for Hard and Soft Switching • Vce(sat) with Positive Temperature Coefficient • High Ruggedness, Good Thermal Stability • Very Tight Parameter Distribution • Halogen Free. “Green” Device (Note 1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead

丝印代码：MP50N65EH；Easy parallel switching capability due to positive temperature coefficient in V CEsat

Features Easy parallel switching capability due to positive temperature coefficient in V CEsat Low V CEsat，fast switching High ruggedness, good thermal stability Very tight parameter distribution Trench and Field Stop IGBT Applications U PS PFC

650V /50A Trench Field Stop IGBT

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