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5082价格
参考价格:¥0.5312
型号:5082 品牌:Keystone 备注:这里有5082多少钱,2025年最近7天走势,今日出价,今日竞价,5082批发/采购报价,5082行情走势销售排行榜,5082报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
5082 | IEC Appliance Outlet D, Screw-on Mounting, Front or Rear Side, Solder Terminal 文件:315.17 Kbytes Page:2 Pages | SCHURTER 硕特 | ||
5082 | IEC Appliance Outlet D Special, Screw-on Mounting, Front Side, Solder Terminal 文件:275.18 Kbytes Page:3 Pages | SCHURTER 硕特 | ||
5082 | WIRE WRAP PIN 文件:269.88 Kbytes Page:1 Pages | KEYSTONE Keystone Electronics Corp. | ||
5082 | Padded Male Blades 文件:289.84 Kbytes Page:1 Pages | HeycoHeyco. 海科 | ||
5082 | 包装:散装 描述:CUTTER TIP ANGL 50DEG FLUSH 4.5\ 工具 钢丝钳 | ETC 知名厂家 | ETC | |
5082 | 包装:零售封装 描述:CUTTER, 50 DEGREE SMALL OVAL FLU 工具 钢丝钳 | EasyBraid | ||
SILICON PIN DIODE CHIP DESCRIPTION: The ASI 5082-0001 is a Silicon Dioxide Passivated PIN Diode Chip Designed for MIC Circuit Applications. | ASI | |||
STEP RECOVERY DIODE CHIP DESCRIPTION: The ASI 5082-0008 is a Silicon Oxide Passivated SRD Chip Designed for hybrid local oscillator Applications. FEATURES: • Gold contact metalization • Passivated Chip | ASI | |||
GLASS PACKAGE STEP RECOVERY DIODE DESCRIPTION: The 5082-0112 is a Silicon Step Recovery Diode Designed for Synthesiser and Sampler Applications Requiring a High Performance to Cost Ratio. FEATURES INCLUDE: · Transition Time 90 pS Typical · Hermetic Glass Package | ASI | |||
GLASS PACKAGE STEP RECOVERY DIODE DESCRIPTION: The ASI 5082-0153 is a Silicon Step Recovery Diode Designed for Synthesiser and Sampler Applications Requiring a High Performance to Cost Ratio. FEATURES INCLUDE: • Transition Time 95 pS • Hermetic Glass Package | ASI | |||
GLASS PACKAGE STEP RECOVERY DIODE DESCRIPTION: The ASI 5082-0180 is a Silicon Step Recovery Diode Designed for Synthesiser and Sampler Applications Requiring a High Performance to Cost Ratio. FEATURES INCLUDE: • Transition Time 250 pS Typical • Hermetic Glass Package | ASI | |||
SILICON STEP RECOVERY DIODE DESCRIPTION: The ASI 5082-0310 is a Silicon Step Recovery Diode Designed as a X 8 Frequency Multiplier with X-Band Output Frequencies. FEATURES INCLUDE: • Replacement for HP 5082-0310 • POUT = 400 mW min. @ 6 GHz (X 10) • Hermetic Package | ASI | |||
SILICON STEP RECOVERY DIODE DESCRIPTION: The ASI 5082-0335 is a Silicon Step Recovery Diode Designed as a X 8 Frequency Multiplier with X-Band Output Frequencies. FEATURES INCLUDE: • Replacement for HP 5082-0335 • POUT = 30 mW min. @ 16 GHz (X 8) • Hermetic Coaxial Package | ASI | |||
SILICON STEP RECOVERY DIODE DESCRIPTION: The ASI 5082-0800 is a Silicon Step Recovery Diode Designed as a Frequency Multiplier with S-Band Output Frequencies. FEATURES INCLUDE: • Replacement for HP 5082-0800 • POUT = 10 W typ. @ 4 GHz (X 2) • Hermetic Package | ASI | |||
SILICON STEP RECOVERY DIODE DESCRIPTION: The ASI 5082-0810 is a Silicon Step Recovery Diode Designed as a Frequency Multiplier with S-Band Output Frequencies. FEATURES INCLUDE: • Replacement for HP 5082-0810 • POUT = 4 W typ. @ 4 GHz (X 2) • Hermetic Coaxial Package | ASI | |||
SCHOTTKY MEDIUM BARRIER DIODE DESCRIPTION: The ASI 5082-2207 is a Medium Barrier Schottky Diode designed for General Purpose Mixer Applications. FEATURES INCLUDE: • Small size • Low noise fugure | ASI | |||
SCHOTTKY MEDIUM BARRIER DIODE DESCRIPTION: The ASI 5082-2209 is a Medium Barrier Schottky Diode designed for General Purpose Mixer Applications. FEATURES INCLUDE: • Small size • Low noise fugure | ASI | |||
SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The 5082-2271 is a Low Barrier Schottky Barrier Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 4 GHz. FEATURES INCLUDE: • Low Barrier • Excellent Matching • Replacement for DMF-3070 | ASI | |||
SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The ASI 5082-2277 is a medium Barrier Schottky Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications from 2.4 to 4.8 GHz. FEATURES INCLUDE: • Medium Barrier • Excellent Matching • Rugged design | ASI | |||
SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The 5082-2279 is a Low Barrier Schottky Barrier Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 12 GHz. FEATURES INCLUDE: • Low Barrier • Excellent Matching • Small size | ASI | |||
Schottky Barrier Diodes for General Purpose Applications Description The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D conv | HP 安捷伦科技 | |||
Schottky Barrier Diodes for General Purpose Applications Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SCHOTTKY BARRIER DIODE DESCRIPTION: The ASI 5082-2301is a Silicon Small Signal Schottky Diode for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. | ASI | |||
Schottky Barrier Diodes for General Purpose Applications Description The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D conv | HP 安捷伦科技 | |||
SCHOTTKY BARRIER DIODE DESCRIPTION: The ASI 5082-2303 is a Silicon Small Signal Schottky Diode for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. | ASI | |||
MEDIUM BARRIER SCHOTTKY DIODE DESCRIPTION: The ASI 5082-2350is a Silicon Small Signal Schottky Diode for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. | ASI | |||
MEDIUM BARRIER SCHOTTKY DIODE DESCRIPTION: The ASI 5082-2351 is a Silicon Small Signal Schottky Diode. Supplied in Matched pairs for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. | ASI | |||
SCHOTTKY BARRIER DIODE DESCRIPTION: The ASI 5082-2356 is a Silicon Small Signal Schottky Diode for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. FEATURES: • Matched Bridge Quad Encapsulated | ASI | |||
SCHOTTKY BARRIER DIODE DESCRIPTION: The ASI 5082-2750 is a Silicon Small Signal Schottky Diode Designed for UHF/VHF Mixers, and Video Detector Applications. Color Dot Indicates Cathode. | ASI | |||
SCHOTTKY BARRIER DIODE DESCRIPTION: The ASI 5082-2755 is a Silicon Small Signal Schottky Diode Designed for UHF/VHF Mixers, and Video Detector Applications. Color Band Indicates Cathode. | ASI | |||
SCHOTTKY MEDIUM BARRIER DIODE DESCRIPTION: The ASI 5082-2785 is a Medium Barrier Schottky Diode designed for General Purpose Mixer Applications. FEATURES INCLUDE: • Small size • Low noise fugure | ASI | |||
SCHOTTKY BARRIER DIODE DESCRIPTION: The ASI 5082-2787 is a Silicon Small Signal Schottky Diode Designed for UHF/VHF Mixers, and Video Detector Applications. Color Band Indicates Cathode. RF Parameters are Sample Tested. | ASI | |||
SCHOTTKY LOW BARRIER DIODE DESCRIPTION: The ASI 5082-2794 is a Low Barrier Schottky Diode designed for General Purpose Mixer Applications. FEATURES INCLUDE: • Small size • Low noise figure | ASI | |||
Schottky Barrier Diodes for General Purpose Applications Description The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D conv | HP 安捷伦科技 | |||
SCHOTTKY BARRIER DIODE DESCRIPTION: The ASI 5082-2800 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. | ASI | |||
Schottky Barrier Diodes for General Purpose Applications Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
Absolute Maximum Ratings Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
Pico Second Switching Speed Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or | AVAGO 安华高 | |||
Pico Second Switching Speed Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or | AVAGO 安华高 | |||
Absolute Maximum Ratings Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
Schottky Barrier Diodes for General Purpose Applications Description The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D conv | HP 安捷伦科技 | |||
Schottky Barrier Diodes for General Purpose Applications Description The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D conv | HP 安捷伦科技 | |||
Absolute Maximum Ratings Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SCHOTTKY BARRIER DIODE DESCRIPTION: The ASI 5082-2811 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. | ASI | |||
Pico Second Switching Speed Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or | AVAGO 安华高 | |||
MEDIUM BARRIER SCHOTTKY DIODE DESCRIPTION: The ASI 5082-2817 is a Silicon Small Signal Schottky Diode for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. FEATURES: • Low Noise Figure | ASI | |||
MEDIUM BARRIER SCHOTTKY DIODE DESCRIPTION: The ASI 5082-2818is a Silicon Small Signal Schottky Diode for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. FEATURES: • Low Noise Figure • Matched pair of 5082-2817 | ASI | |||
SCHOTTKY BARRIER DIODE DESCRIPTION: The ASI 5082-2824 is a Silicon Small Signal Schottky Diode Designed for UHF/VHF Mixers, and Video Detector Applications. Color Band Indicates Cathode. RF Parameters are Sample Tested. | ASI | |||
SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: TheASI 5082-2830is a medium Barrier Schottky Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 2.0 GHz. FEATURES INCLUDE: • Medium Barrier • Excellent Matching • Rugged design | ASI | |||
Pico Second Switching Speed Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or | AVAGO 安华高 | |||
SCHOTTKY BARRIER DIODE DESCRIPTION: The ASI 5082-2835 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. | ASI | |||
Schottky Barrier Diodes for General Purpose Applications Description The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D conv | HP 安捷伦科技 | |||
SCHOTTKY BARRIER DIODE DESCRIPTION: The ASI 5082-2836 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. FEATURES: • Batch Matched | ASI | |||
Schottky Barrier Diodes for General Purpose Applications Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SCHOTTKY BARRIER DIODE DESCRIPTION: The ASI 5082-2900 is a Silicon Small Signal Schottky Diode for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. | ASI | |||
Schottky Barrier Diodes for General Purpose Applications Description The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D conv | HP 安捷伦科技 | |||
SILICON PIN DIODE DESCRIPTION: The ASI 5082-3001 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz. | ASI | |||
Large Dynamic Range Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matrices, digital phase shifters, and time multiplex flters. The 5082-3188 is optimized for VHF/UHF bandswitching. Features • Low Harmonic Di | AVAGO 安华高 | |||
PIN Diodes for RF Switching and Attenuating Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matrices, digital phase shifters, and time multiplex filters. The 5082-3188 is optimized for VHF/UHF bandswitching. The RF resistance of a PIN | HP 安捷伦科技 | |||
10 mm and 13 mm Slim Font Seven Segment Displays Description These slim font seven segment displays incorporate a new slim font character design. This slim font features narrow width, specially mitered segments to give a fuller appearance to the illuminated character. Faces of these displays are painted a neutral gray for enhanced on/off contra | HP 安捷伦科技 |
替换型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
Optoisolator Open Collector, NPN Transistor Output | NTE | NTE | ||
TOSHIBA Photocoupler Infrared LED + Photo IC | TOSHIBA 东芝 | TOSHIBA | ||
Line Receiver Feedback Control | TOSHIBA 东芝 | TOSHIBA | ||
PHOTOCOUPLER GaAAs IRED PHOTO IC | TOSHIBA 东芝 | TOSHIBA | ||
Microprocessor System Interfaces | TOSHIBA 东芝 | TOSHIBA | ||
DIGITAL LOGIC GROUND ISOLATION LINE RECEIVER | TOSHIBA 东芝 | TOSHIBA |
5082产品属性
- 类型
描述
- 型号
5082
- 功能描述
端子 PIN
- RoHS
否
- 制造商
AVX
- 产品
Junction Box - Wire to Wire
- 系列
9826
- 线规
26-18
- 颜色
Red
- 型式
Female
- 触点电镀
Tin over Nickel
- 触点材料
Beryllium Copper, Phosphor Bronze
- 端接类型
Crimp
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
avago |
25+23+ |
28700 |
绝对原装正品全新进口深圳现货 |
||||
KeystoneElectronics |
新 |
5 |
全新原装 货期两周 |
||||
Avago |
2025+ |
Case-15 |
32560 |
原装优势绝对有货 |
|||
AVAGO/安华高 |
23+ |
DIP |
4000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
TE/泰科 |
24+ |
36498 |
原厂现货渠道 |
||||
AVAGO/安华高 |
24+ |
9734 |
只做全新原装进口现货 |
||||
AVAGO/安华高 |
24+ |
DIPLED |
21574 |
郑重承诺只做原装进口现货 |
|||
AVAGO |
24+ |
DO35 |
9800 |
全新原装现货QQ:3100163861 微信16601719780张小姐 |
|||
AVAGO |
17+ |
DIP |
6200 |
100%原装正品现货 |
|||
AVAGO/安华高 |
24+ |
NA/ |
3550 |
原装现货,当天可交货,原型号开票 |
5082规格书下载地址
5082参数引脚图相关
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- 50SI-HA11446
- 508590
- 50845-1
- 50845
- 50844
- 50841
- 50840-1
- 50840
- 5083NW
- 50839-1
- 50838
- 50837
- 50836-1
- 50836
- 50835
- 50834
- 50832-1
- 50832
- 50831-1
- 50831
- 50830
- 50829
- 5082-4350
- 5080C
- 508_10
- 507LP5E
- 5076205BZ
- 5076204
- 50729
- 50721
- 50720
- 507-190
- 50719
- 50717
- 507-062
- 507-059
- 507-013
- 507-011
- 507-003
- 507-002
- 507-001
- 506LP4E
- 506AL
- 5068A
- 5068701
- 50255000
- 50254900
- 50254700
- 50254600
- 50254400
- 50254200
- 50210-7
- 50210-6
- 5009(THOMAS)
- 5009
- 5007(THOMAS)
- 5007
- 5005(THOMAS)
- 5005
- 5002-031
- 5002-030
- 5000
- 5.151042214e+011
5082数据表相关新闻
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5055511620,当天发货0755-82732291全新原装现货或门市自取.
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5055511620 ,当天发货0755-82732291全新原装现货或门市自取.
2020-11-1950PX47MEFC6.3X11
深圳科雨电子有限公司,联系人:卢小姐 手机:18975515225 原装正品 大量现货,有需要的可以联系我 QQ:97877805 微信:wei555222777
2019-6-5
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