Schottky Barrier Diodes for General Purpose Applications

Description The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D conv

SCHOTTKY BARRIER DIODE

DESCRIPTION: The ASI 5082-2835 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode.

Pico Second Switching Speed

Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or

封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：RF DIODE SCHOTTKY 8V 150MW AXIAL 分立半导体产品 二极管 - 射频

SCHOTTKY BARRIER DIODE

文件：36.86 Kbytes Page：1 Pages

封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：RF DIODE SCHOTTKY 8V 150MW AXIAL 分立半导体产品 二极管 - 射频

SCHOTTKY BARRIER DIODE

文件：36.86 Kbytes Page：1 Pages