isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=47A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.09Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 600V - 0.075ohm - 47A TO-247 MDmesh?줡ower MOSFET

DESCRIPTION This improved version of MDmesh™ which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs. The resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche character istics. The adoption of the Company’s

N-channel 600 V, 0.075 廓 typ., 35 A FDmesh??II Power MOSFET (with fast diode) in a TO-247 package

Description This device is an N-channel Power MOSFET realized using the second generation of MDmesh™ technology known as FDmesh™ II. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced on-resistance and fast

isc N-Channel MOSFET Transistor

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