Inductive Sensor – With Increased Temperature Range

Features ■Threaded barrel, M30 x 1.5 ■Stainless steel, 1.4301 ■Temperatures up to +100 °C ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Cable connection ■ATEX category II 1 G, Ex Zone 0 at temperatures up to +80 °C ■ATEX category II 2 G. Ex Zone 1 ■ATEX category II 1

Inductive Sensor – With Increased Temperature Range

Features ■Threaded barrel, M18 x 1 ■Stainless steel, 1.4301 ■Temperatures up to +100 °C ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Cable connection ■ATEX category II 1 G, Ex Zone 0 at temperatures up to +80 °C ■ATEX category II 2 G. Ex Zone 1 ■ATEX category II 1 D

Inductive Sensor – With Increased Temperature Range

Features ■Threaded barrel, M18 x 1 ■Stainless steel, 1.4404 ■For temperatures of -40 °C…+100 °C ■High protection class IP69K for harsh environments ■Special double-lip seal ■Protection against all common acidic and alkaline cleaning agents ■Suitable for applications in the food industry

Inductive Sensor – With Increased Temperature Range

Features ■Threaded barrel, M30 x 1.5 ■Stainless steel, 1.4404 ■For temperatures of -40 °C…+100 °C ■High protection class IP69K for harsh environments ■Special double-lip seal ■Protection against all common acidic and alkaline cleaning agents ■Suitable for applications in the food industry

Inductive Sensor

Features ■Threaded barrel, M12 x 1 ■Stainless steel, 1.4301 ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Cable connection Functional principle Inductive sensors detect metal objects contactless and wear-free. For this, they use a high-frequency electromagnetic AC fie

120 W, RF Power GaN HEMT

Description Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain an

120 W, RF Power GaN HEMT

Description Wolfspeed’s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high ga

120 W, RF Power GaN HEMT

文件：1.21044 Mbytes Page：13 Pages

120 W, RF Power GaN HEMT

文件：1.21044 Mbytes Page：13 Pages

120 W, RF Power GaN HEMT

文件：1.21044 Mbytes Page：13 Pages