Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz

Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

Features • Low noise figure NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz

Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz

GaAs N Channel Dual Gate MES FET UHF RF Amplifier

Features • Capable of low voltage operation (VDS = 1.5 to 3 V) • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz)

Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

Transistors>Amplifiers/MOSFETs

Silicon N Channel MOS FET