3A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

3A, 600V   N-CHANNEL POWER MOSFET

The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in p • VDS = 600V, ID = 3A \n• Ultra low gate charge ( typical 10 nC ) \n• Fast switching capability \n• Improved dv/dt capability, high ruggedness;

N-CHANNEL POWER MOSFET

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3A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

3A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

3A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

3A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

3A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

3A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

3A, 600V N-CHANNEL POWER MOSFET

The UTC 3N60K-MK is a high voltage and high current powerMOSFET , designed to have better characteristics, such as fastswitching time, low gate charge, low on-state resistance and havea high rugged avalanche characteristics. This power MOSFET isusually used at high speed switching applications in po • RDS(ON) < 3.6Ω @VGS = 10 V\n• Avalanche energy specified\n• Improved dv/dt capability, high ruggedness;

3A, 600V N-CHANNEL POWER MOSFET

The UTC 3N60K-MT is a high voltage and high current powerMOSFET , designed to have better characteristics, such as fastswitching time, low gate charge, low on-state resistance and havea high rugged avalanche characteristics. This power MOSFET isusually used at high speed switching applications in po • RDS(ON) < 3.2Ω @ VGS = 10 V, ID = 1.5A Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness;

N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL DEPLETION-MODE POWER MOSFET

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N-CHANNEL DEPLETION-MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL DEPLETION-MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

文件：251.86 Kbytes Page：7 Pages

N-CHANNEL DEPLETION-MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL DEPLETION-MODE POWER MOSFET

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N-CHANNEL DEPLETION-MODE POWER MOSFET

文件：255.99 Kbytes Page：7 Pages

N-CHANNEL DEPLETION-MODE POWER MOSFET

文件：255.99 Kbytes Page：7 Pages

N-CHANNEL DEPLETION-MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL DEPLETION-MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL DEPLETION-MODE POWER MOSFET

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N-CHANNEL DEPLETION-MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL DEPLETION-MODE POWER MOSFET

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N-CHANNEL DEPLETION-MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

文件：251.86 Kbytes Page：7 Pages

N-CHANNEL DEPLETION-MODE POWER MOSFET

文件：255.99 Kbytes Page：7 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：251.86 Kbytes Page：7 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

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N-CHANNEL DEPLETION-MODE POWER MOSFET

文件：255.99 Kbytes Page：7 Pages

N-CHANNEL DEPLETION-MODE POWER MOSFET

文件：255.99 Kbytes Page：7 Pages

N-CHANNEL DEPLETION-MODE POWER MOSFET

文件：255.99 Kbytes Page：7 Pages

N-CHANNEL DEPLETION-MODE POWER MOSFET

文件：255.99 Kbytes Page：7 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：251.86 Kbytes Page：7 Pages

N-CHANNEL DEPLETION-MODE POWER MOSFET

文件：255.99 Kbytes Page：7 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：251.86 Kbytes Page：7 Pages

N-CHANNEL DEPLETION-MODE POWER MOSFET

文件：255.99 Kbytes Page：7 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：251.86 Kbytes Page：7 Pages

N-CHANNEL DEPLETION-MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

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TMOS POWER FET 3.0 AMPERES 600 VOLTS

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 2 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP3N60E is supp

TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS

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PowerMOS transistors Avalanche energy rated

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