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型号 功能描述 生产厂家 企业 LOGO 操作
3N60G

N-CHANNEL POWER MOSFET

文件:2.15912 Mbytes Page:7 Pages

SUNMATE

森美特

N-Channel 650 V (D-S) MOSFET

文件:1.0867 Mbytes Page:9 Pages

VBSEMI

微碧半导体

3A, 600V N-CHANNEL POWER MOSFET

文件:388.87 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:399.37 Kbytes Page:9 Pages

UTC

友顺

3A, 600V N-CHANNEL POWER MOSFET

文件:388.87 Kbytes Page:8 Pages

UTC

友顺

3A, 600V N-CHANNEL POWER MOSFET

文件:388.87 Kbytes Page:8 Pages

UTC

友顺

3A, 600V N-CHANNEL POWER MOSFET

文件:388.87 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:399.37 Kbytes Page:9 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:399.37 Kbytes Page:9 Pages

UTC

友顺

3A, 600V N-CHANNEL POWER MOSFET

文件:388.87 Kbytes Page:8 Pages

UTC

友顺

3A, 600V N-CHANNEL POWER MOSFET

文件:388.87 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:399.37 Kbytes Page:9 Pages

UTC

友顺

3A, 600V N-CHANNEL POWER MOSFET

文件:388.87 Kbytes Page:8 Pages

UTC

友顺

3A, 600V N-CHANNEL POWER MOSFET

文件:388.87 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:399.37 Kbytes Page:9 Pages

UTC

友顺

3A, 600V N-CHANNEL POWER MOSFET

文件:388.87 Kbytes Page:8 Pages

UTC

友顺

3A, 600V N-CHANNEL POWER MOSFET

文件:388.87 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:399.37 Kbytes Page:9 Pages

UTC

友顺

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:363.66 Kbytes Page:8 Pages

UTC

友顺

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:363.66 Kbytes Page:8 Pages

UTC

友顺

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:363.66 Kbytes Page:8 Pages

UTC

友顺

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:363.66 Kbytes Page:8 Pages

UTC

友顺

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:363.66 Kbytes Page:8 Pages

UTC

友顺

TMOS POWER FET 3.0 AMPERES 600 VOLTS

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme

MOTOROLA

摩托罗拉

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 2 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■

STMICROELECTRONICS

意法半导体

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP3N60E is supp

PHILIPS

飞利浦

TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS

文件:183.86 Kbytes Page:8 Pages

MOTOROLA

摩托罗拉

PowerMOS transistors Avalanche energy rated

文件:73.73 Kbytes Page:8 Pages

PHILIPS

飞利浦

3N60G产品属性

  • 类型

    描述

  • 型号

    3N60G

  • 制造商

    UTC-IC

  • 制造商全称

    UTC-IC

  • 功能描述

    3A, 600V N-CHANNEL POWER MOSFET

更新时间:2026-7-23 14:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
UTC/友顺
24+
NA
8000
只做原装,欢迎询价,量大价优
VBsemi
21+
TO220
10026
一级代理,专注军工、汽车、医疗、工业、新能源、电力
UTC/友顺
2022+
TO-220
32500
原厂代理 终端免费提供样品
VBSEMI/微碧半导体
25+
TO-220
90000
全新原装现货
VBsemi
25+
TO220
9000
只做原装正品 有挂有货 假一赔十
UTC/友顺
23+
TO-220F
32500
原厂授权代理,海外优势订货渠道。可提供大量库存,详
UTC/友顺
20+
TO-252
32500
现货很近!原厂很远!只做原装
VBSEMI/台湾微碧
23+
TO-220
50000
全新原装正品现货,支持订货
VBSEMI/微碧半导体
25+
TO-220
48000
本公司 只做全新原装正品
VBSEMI/台湾微碧
25+
N/A
20000
只做原装,只有原装。

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