NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS

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Trans GP BJT PNP

陶瓷保险丝管（延时型）Ceramic Tube Fuse(Time-lag)UL/VDE/CCC Approved

High Voltage Power MOSFETs

Features ● International standard packages ● Low RDS (on) ● Rated for unclamped Inductive load Switching (UIS) ● Molding epoxies meet UL 94 V-0 flammability classification Advantages ● Easy to mount ● Space savings ● High power density

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 1100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.0Ω(Max)@VGS= 10V DESCRIPTION · DC choppers · FlyBack Inverters

High Voltage Power MOSFETs

Features ● International standard packages ● Low RDS (on) ● Rated for unclamped Inductive load Switching (UIS) ● Molding epoxies meet UL 94 V-0 flammability classification Advantages ● Easy to mount ● Space savings ● High power density