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N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

VBSEMI

微碧半导体

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

VBSEMI

微碧半导体

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

VBSEMI

微碧半导体

N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature

VBSEMI

微碧半导体

有源晶振

SJK

晶科鑫

N-Channel 60 V (D-S) MOSFET

文件:1.2892 Mbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel 60-V (D-S) MOSFET

文件:896.87 Kbytes Page:6 Pages

VBSEMI

微碧半导体

陶瓷保险丝管(延时型)Ceramic Tube Fuse(Time-lag)UL/VDE/CCC Approved

LANSON

良胜电子

DUAL TMOS POWER MOSFET 60 VOLTS

Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors Dual HDTMOS are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. Dual HDTMOS de

MOTOROLA

摩托罗拉

N?묬hannel SO??, Dual Power MOSFET

文件:276.07 Kbytes Page:12 Pages

ONSEMI

安森美半导体

Power MOSFET 3 Amps, 60 Volts N?묬hannel SO??, Dual

文件:52.47 Kbytes Page:4 Pages

ONSEMI

安森美半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:140.84 Kbytes Page:3 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:163.79 Kbytes Page:3 Pages

UTC

友顺

3N06产品属性

  • 类型

    描述

  • 额定电压:

    250V

  • 最大电压降 (mv):

    180

  • 熔化热能I2T:

    1.35

更新时间:2026-7-27 15:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
23+
TO-220
8000
专注配单,只做原装进口现货
INFINEON
23+
TO-220
7000

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