型号 功能描述 生产厂家&企业 LOGO 操作
3EZ140

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODES(VOLTAGE-11to200VoltsPower-3.0Watts)

FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatediunction •Lowinductance •TypicalIDlessthan1.0µAabove11V •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Hightemperaturesoldering:260°C/10secondsatterminals •Pbfre

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
3EZ140

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE

VOLTAGE-11TO200VoltsPower-3.0Watts FEATURES ●Lowprofilepackage ●Built-instrainrelief ●Glasspassivatedjunction ●Lowinductance ●Excellentclampingcapability ●TypicalIDlessthan1Aabove11V ●Hightemperaturesoldering:260°C/10secondsatterminals ●Plasticpack

TRSYS

Transys Electronics

TRSYS
3EZ140

RECTIFIERSPECIALISTS

VOLTAGERANGE-6.2to200VoltsCURRENT-3.0Watts FEATURES *VoltageRange:6.2Vto200V *Build-instrainrelief *Glasspassivatedjunction *Lowinductance *Excellentclampingcapability *Lowprofilepackage

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
3EZ140

ZENERDIODE

文件:218 Kbytes Page:4 Pages

IRI

Information Resources, Inc. IRI

IRI

SILICONZENERDIODES

VZ:3.9-400Volts PD:3Watts FEATURES: *CompleteVoltageRange3.9to400Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree

EIC

EIC

EIC

3WSILICONZENERDIODE

FEATURES: *ZenervoltageRange3.9to200V *Highsurgecurrentrating *3Wattsdissipationinanormally1wattpackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD

SILICONZENERDIODES

VZ:3.9-400Volts PD:3Watts FEATURES: *CompleteVoltageRange3.9to400Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent MECHANICALDATA *Case:DO-41Moldedplastic *Epoxy:UL94V-Orateflameretardant *Lead:AxialleadsolderableperMI

SYNSEMI

SynSemi,Inc.

SYNSEMI

Ref/RegDiode,P(D)=1W

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SILICON3WATTZENERDIODES

DESCRIPTION The3EZ3.9D5thru3EZ200D5seriesofaxial-leaded3.0wattZenersprovidesvoltageregulationselectionswith5tolerancesfrom3.9to200voltsinaDO-41plasticpackagesize.OtherZenervoltagetolerancesarealsoavailablebychangingthesuffixnumbertothetolerancedesiredsu

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

SILICONZENERDIODES

VZ:3.9-200Volts PD:3Watts FEATURES: *CompleteVoltageRange3.9to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree MECHANICALDATA *Case:DO-41Moldedplastic *Epoxy:UL94V-0rateflameretardant *Lead:Axiallead

EIC

EIC

EIC

3WattsSurfaceMountZenerDiode

FEATURES •GlassPassivatedChip •LowLeakage •Built-inStrainRelief •LowInductance •HighPeakReversePowerDissipation •ForUseinStabilizingandClippingCircuitswithHighPowerRating

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

CompleteVoltageRange3.9to200Volts

VZ:3.9-200Volts PD:3Watts Features *CompleteVoltageRange3.9to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

3WattsAxialLeadedZenerDiodes

Features ●CompleteVoltageRange3.9to400Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

LowZenerImpedanceundersmallcurrent

■Features ●LowZenerImpedanceundersmallcurrent ●HighReliability ●SolderResistance250℃/10S,0.375”(9.5mm)fromthebody

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE

3.0WSILICONZENERDIODE

ZENERDIODES

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC

3WattsSurfaceMountZenerDiode

FEATURES •GlassPassivatedChip •LowLeakage •Built-inStrainRelief •LowInductance •HighPeakReversePowerDissipation •ForUseinStabilizingandClippingCircuitswithHighPowerRating

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

3W140VTAIWANSUNMATESEMICONDUCTORCO.,LIMITED

文件:349.595 Kbytes Page:3 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

SUNMATE

AXIALLEADEDSILICONZENERDIODES

文件:350.897 Kbytes Page:3 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

SUNMATE

封装/外壳:DO-204AL,DO-41,轴向 包装:卷带(TR) 描述:DIODE ZENER 140V 3W DO204AL 分立半导体产品 二极管 - 齐纳 - 单

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

SILICONZENERDIODES

文件:158.77 Kbytes Page:3 Pages

EIC

EIC

EIC

封装/外壳:DO-204AL,DO-41,轴向 包装:卷带(TR) 描述:DIODE ZENER 140V 3W DO204AL 分立半导体产品 二极管 - 齐纳 - 单

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

SILICONZENERDIODES

文件:184.03 Kbytes Page:3 Pages

EIC

EIC

EIC

AxialLeadZenerDiodes

文件:251.71 Kbytes Page:3 Pages

ANOVAAnova Technologies CO., LTD.

林朋科技

ANOVA

3WattsSurfaceMountZenerDiode

文件:738.07 Kbytes Page:4 Pages

SECELECTRONICS

SEC Electronics Inc.

SECELECTRONICS

3EZ140产品属性

  • 类型

    描述

  • 型号

    3EZ140

  • 制造商

    Microsemi Corporation

  • 功能描述

    3.0W, VZ = 140V, ? 20% - Tape and Reel

  • 制造商

    Microsemi Corporation

  • 功能描述

    DIODE ZENER 3W 140V 20% DO-41

更新时间:2024-6-22 9:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
24+
DO-15
98000
全新原厂原装正品现货,可提供技术支持、样品免费!
EIC
2020+
DO-41
16800
绝对原装进口现货,假一赔十,价格优势!?
EIC
2023+
DO-41
16800
芯为只有原装
JX
23+
DO-15
7600
专注配单,只做原装进口现货
JX
2023+
DO-15
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
EIC
24+25+/26+27+
DO-41
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
JX
23+
DO-15
7600
专注配单,只做原装进口现货
EIC
23+
NA
39960
只做进口原装,终端工厂免费送样
Microsemi
1942+
N/A
908
加我qq或微信,了解更多详细信息,体验一站式购物
MICROSEMI
1809+
DO-204
3675
就找我吧!--邀您体验愉快问购元件!

3EZ140芯片相关品牌

  • API
  • APITECH
  • BOARDCOM
  • crydom
  • Hitachi
  • IDT
  • LUGUANG
  • MOLEX4
  • NEC
  • POWEREX
  • SILABS
  • SUPERWORLD

3EZ140数据表相关新闻