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位置：首页 > IC中文资料第1307页 > 3EZ1

3EZ1价格

参考价格：￥142.5327

型号：3EZ1 品牌：TEConnectivity/Corcom 备注：这里有3EZ1多少钱，2024年最近7天走势，今日出价，今日竞价，3EZ1批发/采购报价，3EZ1行情走势销售排行榜，3EZ1报价。
型号 功能描述 生产厂家&企业 LOGO 操作
3EZ1

Silicon-Power-Z-Diodes(non-planartechnology)

Silicon-Power-ZenerDiodes(non-planartechnology) •Maximumpowerdissipation3W •NominalZ-voltage1...200V •PlasticcaseDO-15 •Weightapprox.0.4g •PlasticmaterialhasULclassification94V-0

DiotecDIOTEC

德欧泰克

Diotec
3EZ1

Zenersilicondiodes

MaximumPower Dissipation:3W NominalZ-voltage:1to200V

SemikronSemikron

赛米控

Semikron
3EZ1

PCBoardMountableRFIPowerLineFiltersforEmissionControlApplications

X,Y,ZSeries X,Y,andZseriesRFIfiltersarecompact,PCboardmountablecomponents,designedtoconsumeminimalboardspace.Theyprovideachoiceofthreelevelsofperformance,intendedtobeallthepowerlinefilterneededforthecorrespondingemissioncontrolapplication. XSeries–

MACOM

Tyco Electronics

MACOM
3EZ1

ChassisorPCBoardMountablePowerLineFiltersforEmissionControl

X,Y,ZSeries •CompactchassisorPCboardmountable •Threelevelsofperformance •Completefilteringsolutioninminimalsize XSeries •Designedtobringmostdigitalequipment (includingthosewithswitchingpowersupplies) intocompliancewithFCCPart15J,ClassB conduct

TECTE Connectivity Ltd

泰科电子泰科电子有限公司

TEC
3EZ1

ZENERDIODES

VzRANGE:1.0,3.9-200V POWERDISSIPATION:3.0W FEATURES ◇Foruseinstabilizingandclippingcurcuitswithhigh powerrating. ◇Thezenervoltagesaregradedaccordingtothe internationalE12standard.Smallervoltagetolerances areavallableuponrequest.

KISEMICONDUCTORKwang Myoung I.S. CO.,LTD

明阳国际贸易广州市明阳国际贸易有限公司

KISEMICONDUCTOR
3EZ1

Silicon-Power-ZenerDiodes

文件：83.95 Kbytes Page：2 Pages

DiotecDIOTEC

德欧泰克

Diotec
3EZ1

ChassisorPCBoardMountablePowerLineFiltersforEmissionControl

文件：190.49 Kbytes Page：4 Pages

MACOM

Tyco Electronics

MACOM
3EZ1

SurfaceMountSilicon-ZenerDiodes(non-planartechnology)

文件：90.87 Kbytes Page：2 Pages

DiotecDIOTEC

德欧泰克

Diotec
3EZ1

Silicon-Power-ZenerDiodes(non-planartechnology)

文件：84.42 Kbytes Page：2 Pages

DiotecDIOTEC

德欧泰克

Diotec
3EZ10

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODES

FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatediunction •Lowinductance •TypicalIDlessthan1.0µAabove11V •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Hightemperaturesoldering:260°C/10secondsatterminals •Pbfre

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
3EZ10

Zenersilicondiodes

MaximumPower Dissipation:3W NominalZ-voltage:1to200V

SemikronSemikron

赛米控

Semikron
3EZ10

Silicon-Power-Z-Diodes(non-planartechnology)

Silicon-Power-ZenerDiodes(non-planartechnology) •Maximumpowerdissipation3W •NominalZ-voltage1...200V •PlasticcaseDO-15 •Weightapprox.0.4g •PlasticmaterialhasULclassification94V-0

DiotecDIOTEC

德欧泰克

Diotec
3EZ10

RECTIFIERSPECIALISTS

VOLTAGERANGE-6.2to200VoltsCURRENT-3.0Watts FEATURES *VoltageRange:6.2Vto200V *Build-instrainrelief *Glasspassivatedjunction *Lowinductance *Excellentclampingcapability *Lowprofilepackage

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
3EZ100

RECTIFIERSPECIALISTS

VOLTAGERANGE-6.2to200VoltsCURRENT-3.0Watts FEATURES *VoltageRange:6.2Vto200V *Build-instrainrelief *Glasspassivatedjunction *Lowinductance *Excellentclampingcapability *Lowprofilepackage

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
3EZ100

Silicon-Power-Z-Diodes(non-planartechnology)

Silicon-Power-ZenerDiodes(non-planartechnology) •Maximumpowerdissipation3W •NominalZ-voltage1...200V •PlasticcaseDO-15 •Weightapprox.0.4g •PlasticmaterialhasULclassification94V-0

DiotecDIOTEC

德欧泰克

Diotec
3EZ100

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODES(VOLTAGE-11to200VoltsPower-3.0Watts)

FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatediunction •Lowinductance •TypicalIDlessthan1.0µAabove11V •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Hightemperaturesoldering:260°C/10secondsatterminals •Pbfre

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
3EZ100

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE

VOLTAGE-11TO200VoltsPower-3.0Watts FEATURES ●Lowprofilepackage ●Built-instrainrelief ●Glasspassivatedjunction ●Lowinductance ●Excellentclampingcapability ●TypicalIDlessthan1Aabove11V ●Hightemperaturesoldering:260°C/10secondsatterminals ●Plasticpack

TRSYS

Transys Electronics

TRSYS
3EZ100

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODES

FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatediunction •Lowinductance •TypicalIDlessthan1.0µAabove11V •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Hightemperaturesoldering:260°C/10secondsatterminals •Pbfre

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
3EZ100

Zenersilicondiodes

MaximumPower Dissipation:3W NominalZ-voltage:1to200V

SemikronSemikron

赛米控

Semikron
3EZ100D10

SILICONZENERDIODES

VZ:3.9-400Volts PD:3Watts FEATURES: *CompleteVoltageRange3.9to400Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree

EIC

EIC

EIC
3EZ100D5

Ref/RegDiode,P(D)=1W

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
3EZ100D5

SILICONZENERDIODES

VZ:3.9-400Volts PD:3Watts FEATURES: *CompleteVoltageRange3.9to400Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent MECHANICALDATA *Case:DO-41Moldedplastic *Epoxy:UL94V-Orateflameretardant *Lead:AxialleadsolderableperMI

SYNSEMI

SynSemi，Inc.

SYNSEMI
3EZ100D5

SILICON3WATTZENERDIODES

DESCRIPTION The3EZ3.9D5thru3EZ200D5seriesofaxial-leaded3.0wattZenersprovidesvoltageregulationselectionswith5tolerancesfrom3.9to200voltsinaDO-41plasticpackagesize.OtherZenervoltagetolerancesarealsoavailablebychangingthesuffixnumbertothetolerancedesiredsu

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
3EZ100D5

SILICONZENERDIODES

VZ:3.9-200Volts PD:3Watts FEATURES: *CompleteVoltageRange3.9to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree MECHANICALDATA *Case:DO-41Moldedplastic *Epoxy:UL94V-0rateflameretardant *Lead:Axiallead

EIC

EIC

EIC
3EZ100D5

3WSILICONZENERDIODE

FEATURES: *ZenervoltageRange3.9to200V *Highsurgecurrentrating *3Wattsdissipationinanormally1wattpackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD
3EZ100D5

CompleteVoltageRange3.9to200Volts

VZ:3.9-200Volts PD:3Watts Features *CompleteVoltageRange3.9to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
3EZ100D5

3WattsAxialLeadedZenerDiodes

Features ●CompleteVoltageRange3.9to400Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
3EZ100D5

3WattsAxialLeadedZenerDiodes

Features ●CompleteVoltageRange3.9to400Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
3EZ100D5

LowZenerImpedanceundersmallcurrent

■Features ●LowZenerImpedanceundersmallcurrent ●HighReliability ●SolderResistance250℃/10S，0.375”（9.5mm）fromthebody

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE
3EZ100D5

3.0WSILICONZENERDIODE

ZENERDIODES

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC
3EZ100D5

3WattsSurfaceMountZenerDiode

FEATURES •GlassPassivatedChip •LowLeakage •Built-inStrainRelief •LowInductance •HighPeakReversePowerDissipation •ForUseinStabilizingandClippingCircuitswithHighPowerRating

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
3EZ100D5-C

3WattsSurfaceMountZenerDiode

FEATURES •GlassPassivatedChip •LowLeakage •Built-inStrainRelief •LowInductance •HighPeakReversePowerDissipation •ForUseinStabilizingandClippingCircuitswithHighPowerRating

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
3EZ10D10

SILICONZENERDIODES

VZ:3.9-400Volts PD:3Watts FEATURES: *CompleteVoltageRange3.9to400Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree

EIC

EIC

EIC
3EZ10D5

3WattDO??1Surmetic30ZenerVoltageRegulators

Thisisacompleteseriesof3WattZenerdiodeswithlimitsandexcellentoperatingcharacteristicsthatreflectthesuperiorcapabilitiesofsilicon−oxidepassivatedjunctions.Allthisinanaxial−lead, transfer−moldedplasticpackagethatoffersprotectioninallcommonenvironmentalconditio

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
3EZ10D5

SILICONZENERDIODES

VZ:3.9-200Volts PD:3Watts FEATURES: *CompleteVoltageRange3.9to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree MECHANICALDATA *Case:DO-41Moldedplastic *Epoxy:UL94V-0rateflameretardant *Lead:Axiallead

EIC

EIC

EIC
3EZ10D5

SILICONZENERDIODES

VZ:3.9-400Volts PD:3Watts FEATURES: *CompleteVoltageRange3.9to400Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent MECHANICALDATA *Case:DO-41Moldedplastic *Epoxy:UL94V-Orateflameretardant *Lead:AxialleadsolderableperMI

SYNSEMI

SynSemi，Inc.

SYNSEMI
3EZ10D5

3WSILICONZENERDIODE

FEATURES: *ZenervoltageRange3.9to200V *Highsurgecurrentrating *3Wattsdissipationinanormally1wattpackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD
3EZ10D5

SILICON3WATTZENERDIODES

DESCRIPTION The3EZ3.9D5thru3EZ200D5seriesofaxial-leaded3.0wattZenersprovidesvoltageregulationselectionswith5tolerancesfrom3.9to200voltsinaDO-41plasticpackagesize.OtherZenervoltagetolerancesarealsoavailablebychangingthesuffixnumbertothetolerancedesiredsu

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
3EZ10D5

Ref/RegDiode,P(D)=1W

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
3EZ10D5

3WattsSurfaceMountZenerDiode

FEATURES •GlassPassivatedChip •LowLeakage •Built-inStrainRelief •LowInductance •HighPeakReversePowerDissipation •ForUseinStabilizingandClippingCircuitswithHighPowerRating

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
3EZ10D5

3.0WSILICONZENERDIODE

ZENERDIODES

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC
3EZ10D5

3WattsAxialLeadedZenerDiodes

Features ●CompleteVoltageRange3.9to400Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
3EZ10D5

3WattsAxialLeadedZenerDiodes

Features ●CompleteVoltageRange3.9to400Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
3EZ10D5

CompleteVoltageRange3.9to200Volts

VZ:3.9-200Volts PD:3Watts Features *CompleteVoltageRange3.9to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
3EZ10D5

3WGlassPassivatedJunctionSiliconZenerDiode5.1-75Volts

Features •LowProfilePackage •GlassPassivatedJunction •ExcellentClampingCapability •LeadFreeFinish/RoHSCompliant(NoteC)(PSuffixDesignatesCompliant.SeeOrderingInformation) •Halogenfreeavailableuponrequestbyaddingsuffix-HF

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
3EZ10D5

LowZenerImpedanceundersmallcurrent

■Features ●LowZenerImpedanceundersmallcurrent ●HighReliability ●SolderResistance250℃/10S，0.375”（9.5mm）fromthebody

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE
3EZ10D5

3WGlassPassivatedJunctionSiliconZenerDiode5.1-75Volts

Features •LowProfilePackage •GlassPassivatedJunction •ExcellentClampingCapability •LeadFreeFinish/RoHSCompliant(NoteC)(PSuffixDesignatesCompliant.SeeOrderingInformation) •Halogenfreeavailableuponrequestbyaddingsuffix-HF

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
3EZ10D5-C

3WattsSurfaceMountZenerDiode

FEATURES •GlassPassivatedChip •LowLeakage •Built-inStrainRelief •LowInductance •HighPeakReversePowerDissipation •ForUseinStabilizingandClippingCircuitswithHighPowerRating

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
3EZ11

RECTIFIERSPECIALISTS

VOLTAGERANGE-6.2to200VoltsCURRENT-3.0Watts FEATURES *VoltageRange:6.2Vto200V *Build-instrainrelief *Glasspassivatedjunction *Lowinductance *Excellentclampingcapability *Lowprofilepackage

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
3EZ11

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODES

FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatediunction •Lowinductance •TypicalIDlessthan1.0µAabove11V •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Hightemperaturesoldering:260°C/10secondsatterminals •Pbfre

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
3EZ11

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODES(VOLTAGE-11to200VoltsPower-3.0Watts)

FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatediunction •Lowinductance •TypicalIDlessthan1.0µAabove11V •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Hightemperaturesoldering:260°C/10secondsatterminals •Pbfre

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
3EZ11

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE

VOLTAGE-11TO200VoltsPower-3.0Watts FEATURES ●Lowprofilepackage ●Built-instrainrelief ●Glasspassivatedjunction ●Lowinductance ●Excellentclampingcapability ●TypicalIDlessthan1Aabove11V ●Hightemperaturesoldering:260°C/10secondsatterminals ●Plasticpack

TRSYS

Transys Electronics

TRSYS
3EZ11

Silicon-Power-Z-Diodes(non-planartechnology)

Silicon-Power-ZenerDiodes(non-planartechnology) •Maximumpowerdissipation3W •NominalZ-voltage1...200V •PlasticcaseDO-15 •Weightapprox.0.4g •PlasticmaterialhasULclassification94V-0

DiotecDIOTEC

德欧泰克

Diotec
3EZ11

Zenersilicondiodes

MaximumPower Dissipation:3W NominalZ-voltage:1to200V

SemikronSemikron

赛米控

Semikron
3EZ110

Silicon-Power-Z-Diodes(non-planartechnology)

Silicon-Power-ZenerDiodes(non-planartechnology) •Maximumpowerdissipation3W •NominalZ-voltage1...200V •PlasticcaseDO-15 •Weightapprox.0.4g •PlasticmaterialhasULclassification94V-0

DiotecDIOTEC

德欧泰克

Diotec
3EZ110

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODES(VOLTAGE-11to200VoltsPower-3.0Watts)

FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatediunction •Lowinductance •TypicalIDlessthan1.0µAabove11V •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Hightemperaturesoldering:260°C/10secondsatterminals •Pbfre

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
3EZ110

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE

VOLTAGE-11TO200VoltsPower-3.0Watts FEATURES ●Lowprofilepackage ●Built-instrainrelief ●Glasspassivatedjunction ●Lowinductance ●Excellentclampingcapability ●TypicalIDlessthan1Aabove11V ●Hightemperaturesoldering:260°C/10secondsatterminals ●Plasticpack

TRSYS

Transys Electronics

TRSYS
3EZ110

Zenersilicondiodes

MaximumPower Dissipation:3W NominalZ-voltage:1to200V

SemikronSemikron

赛米控

Semikron
3EZ110

RECTIFIERSPECIALISTS

VOLTAGERANGE-6.2to200VoltsCURRENT-3.0Watts FEATURES *VoltageRange:6.2Vto200V *Build-instrainrelief *Glasspassivatedjunction *Lowinductance *Excellentclampingcapability *Lowprofilepackage

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
3EZ110D10

SILICONZENERDIODES

VZ:3.9-400Volts PD:3Watts FEATURES: *CompleteVoltageRange3.9to400Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree

EIC

EIC

EIC

3EZ1产品属性

  • 类型

    描述

  • 型号

    3EZ1

  • 功能描述

    电源线滤波器 3A FASTON FLANGE MNT

  • RoHS

    否

  • 制造商

    EPCOS

  • 电压额定值

    277 VAC

  • 电流额定值

    100 A

  • 安装风格

    Chassis

  • 端接类型

    Screw

3EZ1供应商更多...

更新时间：2024-6-22 15:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市富利微电子科技有限公司
3EZ18D5RLG
ON/安森美
23+
NA
30000
房间原装现货特价热卖,有单详谈
询价
深圳市云美电子科技有限公司
3EZ13D5RLG稳压(齐纳)二极管
ON/安森美
22+
NA
38343
郑重承诺只做原装进口现货
询价
深圳市恒凯威科技开发有限公司
3EZ18D5RLG
ON/安森美
21+
NA
12820
只做原装,质量保证
询价
深圳市纳艾斯科技有限公司
3EZ18D5
COMON
2020+
DO-41
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
瀚佳科技(深圳)有限公司
3EZ19D5
EIC
2020+
DO-41
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
深圳市智创诚芯电子科技有限公司
3EZ18
DIOTEC
22+
DO-41
25000
原装现货,价格优惠,假一罚十
询价
深圳市惊羽科技有限公司
3EZ19D5-TP
MCC-美微科
24+25+/26+27+
DO-15
236148
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
深圳诚思涵科技有限公司
3EZ13D5RLG
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
深圳和润天下电子科技有限公司
3EZ18D5RLG
ON/安森美
22+
NA
5750
可订货,请确认
询价
深圳市智连鑫科技有限公司
3EZ13D5RLG
ON(安森美)
2021/2022+
标准封装
8000
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价

3EZ1芯片相关品牌

  • API
  • APITECH
  • BOARDCOM
  • crydom
  • Hitachi
  • IDT
  • LUGUANG
  • MOLEX4
  • NEC
  • POWEREX
  • SILABS
  • SUPERWORLD

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