型号 功能描述 生产厂家&企业 LOGO 操作
3EZ100

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODES(VOLTAGE-11to200VoltsPower-3.0Watts)

FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatediunction •Lowinductance •TypicalIDlessthan1.0µAabove11V •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Hightemperaturesoldering:260°C/10secondsatterminals •Pbfre

PANJITPan Jit International Inc.

强茂強茂股份有限公司

PANJIT
3EZ100

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE

VOLTAGE-11TO200VoltsPower-3.0Watts FEATURES ●Lowprofilepackage ●Built-instrainrelief ●Glasspassivatedjunction ●Lowinductance ●Excellentclampingcapability ●TypicalIDlessthan1Aabove11V ●Hightemperaturesoldering:260°C/10secondsatterminals ●Plasticpack

TRSYS

Transys Electronics

TRSYS
3EZ100

Silicon-Power-Z-Diodes(non-planartechnology)

Silicon-Power-ZenerDiodes(non-planartechnology) •Maximumpowerdissipation3W •NominalZ-voltage1...200V •PlasticcaseDO-15 •Weightapprox.0.4g •PlasticmaterialhasULclassification94V-0

Diotec

Diotec Semiconductor

Diotec
3EZ100

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODES

FEATURES •Lowprofilepackage •Built-instrainrelief •Glasspassivatediunction •Lowinductance •TypicalIDlessthan1.0µAabove11V •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Hightemperaturesoldering:260°C/10secondsatterminals •Pbfre

PANJITPan Jit International Inc.

强茂強茂股份有限公司

PANJIT
3EZ100

Zenersilicondiodes

MaximumPower Dissipation:3W NominalZ-voltage:1to200V

SemikronSemikron International

赛米控丹佛斯

Semikron
3EZ100

RECTIFIERSPECIALISTS

VOLTAGERANGE-6.2to200VoltsCURRENT-3.0Watts FEATURES *VoltageRange:6.2Vto200V *Build-instrainrelief *Glasspassivatedjunction *Lowinductance *Excellentclampingcapability *Lowprofilepackage

DCCOM

Dc Components

DCCOM
3EZ100

Silicon-Power-ZenerDiodes(non-planartechnology)

文件:84.42 Kbytes Page:2 Pages

Diotec

Diotec Semiconductor

Diotec
3EZ100

Silicon-Power-ZenerDiodes

文件:83.95 Kbytes Page:2 Pages

Diotec

Diotec Semiconductor

Diotec
3EZ100

ZENERDIODE

文件:218 Kbytes Page:4 Pages

IRI

Information Resources, Inc. IRI

IRI

SILICONZENERDIODES

VZ:3.9-400Volts PD:3Watts FEATURES: *CompleteVoltageRange3.9to400Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree

EIC

EIC discrete Semiconductors

EIC

3WattsAxialLeadedZenerDiodes

Features ●CompleteVoltageRange3.9to400Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

3WSILICONZENERDIODE

FEATURES: *ZenervoltageRange3.9to200V *Highsurgecurrentrating *3Wattsdissipationinanormally1wattpackage

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD

CompleteVoltageRange3.9to200Volts

VZ:3.9-200Volts PD:3Watts Features *CompleteVoltageRange3.9to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

SILICONZENERDIODES

VZ:3.9-400Volts PD:3Watts FEATURES: *CompleteVoltageRange3.9to400Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent MECHANICALDATA *Case:DO-41Moldedplastic *Epoxy:UL94V-Orateflameretardant *Lead:AxialleadsolderableperMI

SYNSEMI

SynSemi,Inc.

SYNSEMI

Ref/RegDiode,P(D)=1W

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SILICONZENERDIODES

VZ:3.9-200Volts PD:3Watts FEATURES: *CompleteVoltageRange3.9to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree MECHANICALDATA *Case:DO-41Moldedplastic *Epoxy:UL94V-0rateflameretardant *Lead:Axiallead

EIC

EIC discrete Semiconductors

EIC

SILICON3WATTZENERDIODES

DESCRIPTION The3EZ3.9D5thru3EZ200D5seriesofaxial-leaded3.0wattZenersprovidesvoltageregulationselectionswith5tolerancesfrom3.9to200voltsinaDO-41plasticpackagesize.OtherZenervoltagetolerancesarealsoavailablebychangingthesuffixnumbertothetolerancedesiredsu

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

3WattsAxialLeadedZenerDiodes

Features ●CompleteVoltageRange3.9to400Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

3WattsSurfaceMountZenerDiode

FEATURES •GlassPassivatedChip •LowLeakage •Built-inStrainRelief •LowInductance •HighPeakReversePowerDissipation •ForUseinStabilizingandClippingCircuitswithHighPowerRating

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

3.0WSILICONZENERDIODE

ZENERDIODES

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC

3.0WZENERDIODE

GlassPassivatedDieConstruction 3.0WPowerDissipation 3.3V–200VNominalZenerVoltage 5StandardVzTolerance LowInductance ForUseinVoltageRegulatororReference PlasticCaseMaterialhasULFlammability ClassificationRating94V-0

WTEWon-Top Electronics

毅星電子毅星电子股份有限公司

WTE

LowZenerImpedanceundersmallcurrent

■Features ●LowZenerImpedanceundersmallcurrent ●HighReliability ●SolderResistance250℃/10S,0.375”(9.5mm)fromthebody

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE

3WattsSurfaceMountZenerDiode

FEATURES •GlassPassivatedChip •LowLeakage •Built-inStrainRelief •LowInductance •HighPeakReversePowerDissipation •ForUseinStabilizingandClippingCircuitswithHighPowerRating

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

3W100VTAIWANSUNMATESEMICONDUCTORCO.,LIMITED

文件:349.595 Kbytes Page:3 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

SUNMATE

AXIALLEADEDSILICONZENERDIODES

文件:350.897 Kbytes Page:3 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

SUNMATE

封装/外壳:DO-204AL,DO-41,轴向 包装:卷带(TR) 描述:DIODE ZENER 100V 2W DO204AL 分立半导体产品 二极管 - 齐纳 - 单

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

SILICONZENERDIODES

文件:158.77 Kbytes Page:3 Pages

EIC

EIC discrete Semiconductors

EIC

封装/外壳:DO-204AL,DO-41,轴向 包装:卷带(TR) 描述:DIODE ZENER 100V 3W DO204AL 分立半导体产品 二极管 - 齐纳 - 单

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

SILICONZENERDIODES

文件:158.77 Kbytes Page:3 Pages

EIC

EIC discrete Semiconductors

EIC

SILICONZENERDIODES

文件:184.03 Kbytes Page:3 Pages

EIC

EIC discrete Semiconductors

EIC

3WattsSurfaceMountZenerDiode

文件:738.07 Kbytes Page:4 Pages

SECELECTRONICS

SEC Electronics Inc.

SECELECTRONICS

AxialLeadZenerDiodes

文件:251.71 Kbytes Page:3 Pages

ANOVAAnova Technologies CO., LTD.

林朋科技

ANOVA

SILICONZENERDIODES

文件:184.03 Kbytes Page:3 Pages

EIC

EIC discrete Semiconductors

EIC

3EZ100产品属性

  • 类型

    描述

  • 型号

    3EZ100

  • 制造商

    Microsemi Corporation

  • 功能描述

    3.0W, VZ = 100V, ? 20% - Tape and Reel

  • 制造商

    Microsemi Corporation

  • 功能描述

    DIODE ZENER 3W 100V 20% DO-41

更新时间:2024-9-23 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
COMON
2020+
DO-41
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
SUNMATE/森美特
23+
NA/
15250
原装现货,当天可交货,原型号开票
COMON
19
DO-41
700
一级代理,专注军工、汽车、医疗、工业、新能源、电力
EIC
2020+
DO-41
16800
绝对原装进口现货,假一赔十,价格优势!?
VISHAY/威世
24+
DO-15
98000
全新原厂原装正品现货,可提供技术支持、样品免费!
COMON
23+
DO-41
90000
渠道可追溯 可开增值税 正规报关 绝不损原包装
COMON
23+
DO-41
3200
原厂原装正品
COMON
22+23+
DO-41
17239
绝对原装正品全新进口深圳现货
SUNMATE/森美特
2022
DO-41
80000
原装现货,OEM渠道,欢迎咨询
PHY
DO-15
608900
原包原标签100%进口原装常备现货!

3EZ100芯片相关品牌

  • AMPHENOL
  • CK-COMPONENTS
  • DDK
  • GLENAIR
  • MACOM
  • Mitsubishi
  • MOLEX6
  • Panasonic
  • POWERDYNAMICS
  • RHOMBUS-IND
  • TELEDYNE
  • YAMAICHI

3EZ100数据表相关新闻