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N-Channel Enhancement Mode Power MOSFET

Description The G36N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The G36N03KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 44A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 17mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

N-channel TrenchMOS logic level FET

文件:91.74 Kbytes Page:13 Pages

Philips

飞利浦

N-channel TrenchMOS logic level FET

ETC

知名厂家

更新时间:2025-12-26 23:01:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
24+
NA/
4220
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25+23+
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10911
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TO252
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