GSK 760/ 2

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Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz

Description The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on

3AG Normal-Blo Fuse

3AG (311) series Normal-Blo fuses are for use in radios, amplifiers, etc. Features straight type fuse element positioned to center of fuse for easy identification of blown fuse.

Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 ??3600 MHz

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