Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz

Description The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on

Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 ??3600 MHz

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High Power RF GaN-on-SiC HEMT 200 W; 48 V; 3400 - 3600 MHz

The GTRA362002FC is a 200-watt (P3dB) GaN-on=SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange. ·Asymmetrical Doherty design: Main P3dB 85 W Typ; Peak P3dB 115 W Typ\n·Typical Pulsed CW performance; 3500 MHz; 48 V; combined outputs\n·Output power at P3dB 200 W\n·Efficiency 60%\n·Gain 12.5 dB\n·Capable of handling 10:1 VSWR @50 V; 30 W (CW) output power\n·Low thermal resistance\n·Pb-free an;

Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz

Description The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on

Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz

Description The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on

Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz

Description The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on

3AG Normal-Blo Fuse

3AG (311) series Normal-Blo fuses are for use in radios, amplifiers, etc. Features straight type fuse element positioned to center of fuse for easy identification of blown fuse.

GSK 760/ 2

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