丝印代码：356T；SummaryLTV-356T is a small shape chip optoelectronic couplingdevice, suitable for surface mount production

Characteristic  Current conversion ratio (CTR) range: 50 ~ 600 (if = 5mA, VCE = 5V) Input output isolation voltage (VISO = 3750 VRMs) Collector Emitter Breakdown Voltage BVCEO ≥ 80V Working temperature: - 55 - 110 °C  UL -approved : UL 1577, File No .E 492440  Accord with REACH and RoHS Ap

丝印代码：356T；SummaryLTV-356T is a small shape chip optoelectronic couplingdevice, suitable for surface mount production

Characteristic  Current conversion ratio (CTR) range: 50 ~ 600 (if = 5mA, VCE = 5V) Input output isolation voltage (VISO = 3750 VRMs) Collector Emitter Breakdown Voltage BVCEO ≥ 80V Working temperature: - 55 - 110 °C  UL -approved : UL 1577, File No .E 492440  Accord with REACH and RoHS Ap

丝印代码：356T；SummaryLTV-356T is a small shape chip optoelectronic couplingdevice, suitable for surface mount production

Characteristic  Current conversion ratio (CTR) range: 50 ~ 600 (if = 5mA, VCE = 5V) Input output isolation voltage (VISO = 3750 VRMs) Collector Emitter Breakdown Voltage BVCEO ≥ 80V Working temperature: - 55 - 110 °C  UL -approved : UL 1577, File No .E 492440  Accord with REACH and RoHS Ap

丝印代码：356T；SummaryLTV-356T is a small shape chip optoelectronic couplingdevice, suitable for surface mount production

Characteristic  Current conversion ratio (CTR) range: 50 ~ 600 (if = 5mA, VCE = 5V) Input output isolation voltage (VISO = 3750 VRMs) Collector Emitter Breakdown Voltage BVCEO ≥ 80V Working temperature: - 55 - 110 °C  UL -approved : UL 1577, File No .E 492440  Accord with REACH and RoHS Ap

丝印代码：356T；SummaryLTV-356T is a small shape chip optoelectronic couplingdevice, suitable for surface mount production

Characteristic  Current conversion ratio (CTR) range: 50 ~ 600 (if = 5mA, VCE = 5V) Input output isolation voltage (VISO = 3750 VRMs) Collector Emitter Breakdown Voltage BVCEO ≥ 80V Working temperature: - 55 - 110 °C  UL -approved : UL 1577, File No .E 492440  Accord with REACH and RoHS Ap

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

SINGLE-PHASE SILICON BRIDGE RECTIFIER

文件：27.61 Kbytes Page：2 Pages

SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 35 Amperes)

文件：27.38 Kbytes Page：2 Pages