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LF356N价格
参考价格：￥2.2193
型号：LF356N/NOPB 品牌：TI 备注：这里有LF356N多少钱，2026年最近7天走势，今日出价，今日竞价，LF356N批发/采购报价，LF356N行情走势销售排行榜，LF356N报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：LF356N；LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D | TI 德州仪器 |   | ||
丝印代码：LF356N；LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D | TI 德州仪器 | | ||
丝印代码：LF356N；LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D | TI 德州仪器 | | ||
丝印代码：LF356N；LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D | TI 德州仪器 | | ||
丝印代码：LF356N；LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D | TI 德州仪器 | | ||
丝印代码：LF356N；LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D | TI 德州仪器 | | ||
丝印代码：LF356N；LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D | TI 德州仪器 | | ||
丝印代码：LF356N；LFx5x JFET Input Operational Amplifiers 1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D | TI 德州仪器 | | ||
LF356N | WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup | STMICROELECTRONICS 意法半导体 | | |
LF356N | JFET Input Operational Amplifiers 文件：1.07929 Mbytes Page：23 Pages | NSC 国半 | | |
LF356N | Series Monolithic JFET Input Operational Amplifiers 文件：543.17 Kbytes Page：15 Pages | NSC 国半 | | |
LF356N | JFET Input Operational Amplifiers 文件：2.37666 Mbytes Page：43 Pages | TI 德州仪器 | | |
LF356N | JFET Input Operational Amplifiers 文件：2.11476 Mbytes Page：32 Pages | TI 德州仪器 | | |
LF356N | LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers 文件：2.11476 Mbytes Page：32 Pages | TI 德州仪器 | | |
JFET Input Operational Amplifiers 文件：2.3774 Mbytes Page：43 Pages | TI 德州仪器 | | ||
JFET-Input Operational Amplifiers Low Supply Current High Speed 文件：422.42 Kbytes Page：4 Pages | LINER 凌力尔特 | | ||
JFET Input Operational Amplifiers 文件：2.3774 Mbytes Page：43 Pages | TI 德州仪器 | | ||
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup | STMICROELECTRONICS 意法半导体 | | ||
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup | STMICROELECTRONICS 意法半导体 | | ||
SINGLE-PHASE SILICON BRIDGE RECTIFIER 文件：27.61 Kbytes Page：2 Pages | RECTRON 丽正 | | ||
SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 35 Amperes) 文件：27.38 Kbytes Page：2 Pages | RECTRON 丽正 | |
| 替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Series Monolithic JFET Input Operational Amplifiers | NSC 国半 | NSC | | |
Series Monolithic JFET Input Operational Amplifiers | NSC 国半 | NSC | | |
Series Monolithic JFET Input Operational Amplifiers | NSC 国半 | NSC | | |
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
JFET Input Operational Amplifiers | NSC 国半 | NSC | | |
Series Monolithic JFET Input Operational Amplifiers | NSC 国半 | NSC | | |
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
JFET-Input Operational Amplifiers Low Supply Current High Speed | LINER 凌力尔特 | LINER | | |
Series Monolithic JFET Input Operational Amplifiers | NSC 国半 | NSC | | |
Series Monolithic JFET Input Operational Amplifiers | NSC 国半 | NSC | | |
Series Monolithic JFET Input Operational Amplifiers | NSC 国半 | NSC | | |
Series Monolithic JFET Input Operational Amplifiers | NSC 国半 | NSC | | |
WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
Series Monolithic JFET Input Operational Amplifiers | NSC 国半 | NSC | | |
JFET Input Operational Amplifiers | MOTOROLA 摩托罗拉 | MOTOROLA | | |
JFET INPUT OPERATIONAL AMPLIFIERS | ONSEMI 安森美半导体 | ONSEMI | | |
Integrated Circuit JFET Input Operational Amplifier | NTE | NTE | |
LF356N产品属性
- 类型
描述
- 型号
LF356N
- 功能描述
运算放大器 - 运放
- RoHS
否
- 制造商
STMicroelectronics
- 通道数量
4
- 共模抑制比（最小值）
63 dB
- 输入补偿电压
1 mV
- 输入偏流（最大值）
10 pA
- 工作电源电压
2.7 V to 5.5 V
- 安装风格
SMD/SMT
- 封装/箱体
QFN-16
- 转换速度
0.89 V/us
- 关闭
No
- 输出电流
55 mA
- 最大工作温度
+ 125 C
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NS |
23+ |
SOP8 |
20000 |
全新原装假一赔十 |
|||
NS/ST |
专业铁帽 |
CAN8 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
原厂 |
2540+ |
CAN8 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
NSC |
26+ |
SOT89-6 |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
NS |
0211+ |
DIP-8 |
11 |
原装现货海量库存欢迎咨询 |
|||
NS |
25+23+ |
DIP-8 |
10281 |
绝对原装正品全新进口深圳现货 |
|||
NS/国半 |
DIP8 |
275000 |
一级代理原装正品,价格优势,长期供应! |
||||
MOTOROLA |
22+ |
DIP-8 |
3000 |
原装正品,支持实单 |
|||
ST |
25+ |
SOP8 |
3000 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
23+ |
SO-8 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
LF356N芯片相关品牌
LF356N规格书下载地址
LF356N参数引脚图相关
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- LF356H
- LF356D
- LF356BN
- LF356BM
- LF356BJ
- LF356BH
- LF356B
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- LF355N8
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- LF347N
- LF347
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- LED21092
- LED21085
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LF356N数据表相关新闻
LF444CN/NOPB
LF444CN/NOPB
2023-4-28LF412CNPB
产品描述：Dual, 44-V, 4-MHz, high slew rate (15-V/μs), In to V+, JFET-input op amp
2022-4-19LF351N 运算放大器 进口原装，公司现货。
LF351N 进口原装，公司现货。
2020-11-16LFB143064-000
LFB143064-000
2020-10-19LF353N品牌TI封装DIP8
LF353N 品牌TI 封装DIP8
2019-10-24LF351N公司大量原装正品现货/长期供应
LF351N公司大量原装正品现货/长期供应
2019-5-16
DdatasheetPDF页码索引
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