丝印代码：338B；SURFACE MOUNT SILICON ZENER DIODES

FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Pb free product are available : 99 Sn

丝印代码：338B；ZENER DIODE

Features · Glass Passivated Die Construction · 5.0W Power Dissipation · 3.3V – 200V Nominal Zener Voltage · 5 Standard Vz Tolerance · Low Inductance · For Use in Voltage Regulator or Reference · Plastic Case Material has UL Flammability Classification Rating 94V-0

丝印代码：338B；5.0W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 5.0W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

丝印代码：338B；5.0W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 5.0W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5 Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

丝印代码：338B；2.95V-16V 5.5A eFuse with Bidirectional Current Support

Features • Wide operating input voltage range: 2.95V o 16V • Integrated back-to-back FETs with 23mΩ on resistance • Bi-directional current flow during ON state, reverse current blocking during OFF sate • Adjustable over-voltage lockout • Overcurrent protection with load current monitor ou

丝印代码：338B；SILICON ZENER DIODES

Features Complete Voltage Range 3.3 to 200 Volts High peak reverse power dissipation High reliability Low leakage current Mechanical Data Case : SMB (DO-214AA) Molded plastic Epoxy : UL94V-O rate flame retardant Polarity : Color band denotes cathode end Mounting position : Any

丝印代码：338B；SILICON ZENER DIODES

Features Low leakage current High reliability High peak reverse power dissipation Complete Voltage Range 3.3 to 200 Volts

丝印代码：338B；Surface Mount Zener Diodes

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丝印代码：338B；Surface Mount Zener Diodes

文件：252.77 Kbytes Page：4 Pages

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The RF Line NPN Silicon RF Power Transistor Designed primarily for wideband large–signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics Output Power = 80 Watts Minimum Gain = 7.3 dB Efficiency = 50 (Min) • Buil

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