N-channel 500 V, 0.1 廓 typ., 22 A MDmesh??II Power MOSFET in D짼PAK, TO-220FP, TO-220, TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

isc N-Channel MOSFET Transistor

• DESCRIPTION • Drain Current: ID= 22A@ TC=25℃ • Drain Source Voltage : VDSS= 500V(Min) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

N-channel 500 V, 0.1 廓 typ., 22 A MDmesh??II Power MOSFET in D짼PAK, TO-220FP, TO-220, TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

N-channel 500 V, 0.1 廓 typ., 22 A MDmesh??II Power MOSFET in D짼PAK, TO-220FP, TO-220, TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

isc N-Channel MOSFET Transistor

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