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32A, 600V N-Channel IGBT

Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mode

INTERSIL

32A, 600V N-Channel IGBT

Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mode

INTERSIL

更新时间:2026-5-23 23:00:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
SOT-227B
18746
样件支持,可原厂排单订货!
onsemi(安森美)
25+
SOT-227B
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
HAR
23+
NA
20000
全新原装假一赔十
HARRIS
23+
SOIC
65480
FAIRCHILD
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
恩XP
23+
TO-220
69820
终端可以免费供样,支持BOM配单!
Hunteck(恒泰柯)
20+
TOLL
2000
FAIRCILD
22+
SOT227
8000
原装正品支持实单
HAR
25+
QFP
3200
全新原装、诚信经营、公司现货销售
Intersil
24+
TO-247
8866

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