位置:首页 > IC中文资料 > 32N60E2

型号 功能描述 生产厂家 企业 LOGO 操作

32A, 600V N-Channel IGBT

Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mode

INTERSIL

32A, 600V N-Channel IGBT

Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mode

INTERSIL

更新时间:2026-7-29 17:43:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
2015
模块
300
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
Hunteck(恒泰柯)
20+
TOLL
2000
FAIRCILD
22+
SOT227
8000
原装正品支持实单
HAR
25+
QFP
3200
全新原装、诚信经营、公司现货销售
Intersil
24+
TO-247
8866
FAIRCHILD/仙童
25+
MODULE
1452
主打螺丝模块系列
BELLING上海贝岭
2025
TOLL
40
全新、原装
HARRIS
23+
SOIC
65480
HARRIS
05+
原厂原装
4370
只做全新原装真实现货供应
恩XP
23+
TO-220
69820
终端可以免费供样,支持BOM配单!

32N60E2芯片相关品牌

32N60E2数据表相关新闻