TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design a

SCHOTTKY DIODE ARRAY

DEVICE DESCRIPTION The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. The device helps suppress transients caused by transmission line reflections, cross talk and switching noise. The SDA32 consists of an array of 16 high speed Schot

200V N-Channel MOSFET

文件：911.05 Kbytes Page：9 Pages

200V N-Channel MOSFET

文件：911.05 Kbytes Page：9 Pages

TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM

文件：205.3 Kbytes Page：8 Pages