功率 MOSFET，200V，32A，75mΩ，单 N 沟道，TO-247

此高级功率 MOSFET 适用于承受雪崩和换相模式下的高能量。新型能效设计还提供了具有快速恢复时间的漏极-源极二极管。此类器件专用于电源、转换器和 PWM 电机控制中的低电压、高速开关应用，尤其适用于二极管速度和换相安全运行区域非常关键的桥式电路，可针对非预期的瞬变电压提供附加安全裕度。 • Avalanche Energy Specified\n• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode\n• Diode is Characterized for Use in Bridge Circuits\n• IDSS and VDS(on) Specified at Elevated Temperature\n• Isolated Mounting Hole\n• Pb-Free Package is Available;

isc N-Channel MOSFET Transistor

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Power MOSFET 32 Amps, 200 Volts N-Channel TO-247

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TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM

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Power MOSFET 32 Amps, 200 Volts N-Channel TO-247

文件：89.11 Kbytes Page：7 Pages

TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design a

SCHOTTKY DIODE ARRAY

DEVICE DESCRIPTION The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. The device helps suppress transients caused by transmission line reflections, cross talk and switching noise. The SDA32 consists of an array of 16 high speed Schot

200V N-Channel MOSFET

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200V N-Channel MOSFET

文件：911.05 Kbytes Page：9 Pages