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MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=24mΩMAX.(VGS=10V,ID=16A) RDS(on)2

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=24mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffect Transistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=25mΩMAX.(VGS=10V,ID=16A) •LowCis

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

N-Channel60V(D-S)MOSFET

文件:960.08 Kbytes Page:7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI
更新时间:2024-5-22 10:15:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VB
TO-251
68900
原包原标签100%进口原装常备现货!
VB
21+
TO-251
10000
原装现货假一罚十
NEC
23+
TO-251
10000
公司只做原装正品
NEC
22+
TO-251
6000
十年配单,只做原装
VBSEMI
19+
TO-251
29600
绝对原装现货,价格优势!
NEC
08+(pbfree)
TO-251
8866
NEC
6000
面议
19
TO-251
23+
N/A
36000
正品授权货源可靠
NEC
22+
TO-251
25000
只做原装进口现货,专注配单
NEC
23+
TO-251
6000
原装正品,支持实单

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