Schottky Rectifiers

Schottky Diodes

FEATURES High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7s, per JESD 22-B106 TYPICAL APPLICATIO

SCHOTTKY RECTIFIER DIODE

Features ● High frequency operation ● Low forward voltage drop ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability ● Solder dip 275 °C max. 7s, per JESD 22-B106 Typical Ap

Schottky Diodes

Features ● High frequency operation ● Low forward voltage drop ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability ● Solder dip 275 °C max. 7s, per JESD 22-B106 Typical Ap

30.0 Ampere,45Volt PhotoVoltaic Bypass Schottky Barrier Rectifier Diode

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30.0 Ampere,45Volt PhotoVoltaic Application Schottky Barrier Rectifier Diode

Features ※ ThinkiSemi latest&matured process Schottky ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power