| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in | VishayVishay Siliconix 威世威世科技公司 |   | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO | VishayVishay Siliconix 威世威世科技公司 | | ||
Power Schottky rectifier 文件：167.64 Kbytes Page：8 Pages | STMICROELECTRONICS 意法半导体 | | ||
Low forward voltage drop, low power losses 文件：144.59 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：105.26 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Semiconductor Diodes Di |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
|||
VISHAY/威世 |
23+ |
TO2203 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY/威世 |
24+ |
NA/ |
3300 |
原厂直销,现货供应,账期支持! |
|||
24+ |
N/A |
60000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Vishay Semiconductor Diodes Di |
23+ |
TO220AB |
8000 |
只做原装现货 |
|||
VISHAY/威世 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY原装 |
25+23+ |
TO-220 |
22350 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
Vishay(威世) |
23+ |
N/A |
11800 |
||||
VISHAY/威世 |
24+ |
TO-220 |
6000 |
只做原装，欢迎询价，量大价优 |
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DdatasheetPDF页码索引
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