2SK97价格

参考价格:¥0.8450

型号:2SK973 品牌:HITACHI 备注:这里有2SK97多少钱,2025年最近7天走势,今日出价,今日竞价,2SK97批发/采购报价,2SK97行情走势销售排行榜,2SK97报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

ISC

无锡固电

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 350mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 350mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,power switch and solenoid drive Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,power switch and solenoid drive Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,power switch and solenoid drive Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features 1. Low on-resistance 2. High speed switching 3. Low drive current 4. 4 V gate drive device  - Can be driven from 5 V source 5. Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

RENESAS

瑞萨

Silicon N Channel MOS FET

Features 1. Low on-resistance 2. High speed switching 3. Low drive current 4. 4 V gate drive device  - Can be driven from 5 V source 5. Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

RENESAS

瑞萨

Silicon N-Channel MOS FET

HitachiHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

HitachiHitachi Semiconductor

日立日立公司

Power MOSFETs

RENESAS

瑞萨

N-Channel 60 V (D-S) MOSFET

文件:960.08 Kbytes Page:7 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件:266.62 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:261.16 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

文件:1.00193 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Silicon N Channel MOS FET

文件:116.13 Kbytes Page:7 Pages

RENESAS

瑞萨

2SK979

文件:93.35 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2SK97产品属性

  • 类型

    描述

  • 型号

    2SK97

  • 制造商

    Renesas Electronics Corporation

更新时间:2025-12-25 17:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI
TO252
9850
一级代理 原装正品假一罚十价格优势长期供货
HITACHI/日立
21+
TO252
1709
HITACHI/日立
25+
TO252
9800
全新原装现货,假一赔十
HITACHI
24+
TO252
880000
明嘉莱只做原装正品现货
HITACHI/日立
22+
TO252
12245
现货,原厂原装假一罚十!
RENESAS/瑞萨
23+
SOT252
95000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
HITACHI
25+23+
TO252
9600
绝对原装正品全新进口深圳现货
HITACHI
24+
TO252
54000
郑重承诺只做原装进口现货
HITACHI
24+
TO252
9600
原装现货,优势供应,支持实单!
HIT
2023+
DPAK
50000
原装现货

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