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2SK97价格
参考价格：￥0.8450
型号：2SK973 品牌：HITACHI 备注：这里有2SK97多少钱，2024年最近7天走势，今日出价，今日竞价，2SK97批发/采购报价，2SK97行情走势销售排行榜，2SK97报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice –Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 |  |   | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=65mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=25A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=40mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice –Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice –Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice –Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=2.0A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=350mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=2.0A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=350mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice –Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice –Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice –Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice –Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconN-ChannelMOSFET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice -Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconNChannelMOSFET Features 1.Lowon-resistance 2.Highspeedswitching 3.Lowdrivecurrent 4.4Vgatedrivedevice -Canbedrivenfrom5Vsource 5.Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
SiliconNChannelMOSFET Features 1.Lowon-resistance 2.Highspeedswitching 3.Lowdrivecurrent 4.4Vgatedrivedevice -Canbedrivenfrom5Vsource 5.Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive Application Highspeedpowerswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-Channel60V(D-S)MOSFET 文件：960.08 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
iscN-ChannelMOSFETTransistor 文件：266.62 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel60V(D-S)MOSFET 文件：1.00193 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：261.16 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconNChannelMOSFET 文件：116.13 Kbytes Page：7 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
2SK979 文件：93.35 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
90150 |
正品授权货源可靠 |
||||
HITACHI |
22+ |
TO252 |
9600 |
原装现货,优势供应,支持实单! |
|||
RENESAS/瑞萨 |
2021+ |
SOT252 |
95000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
HITACHI |
23+ |
TO252 |
6000 |
进口原装房间现货实库实数 |
|||
RENESAS |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
HITACHI |
TO-252 |
265209 |
假一罚十原包原标签常备现货! |
||||
HITACHI/日立 |
2021+ |
TO252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
NIKO |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
R |
23+ |
D-PAK |
37650 |
全新原装真实库存含13点增值税票! |
|||
HITACHI |
23+ |
TO252 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
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2SK97数据表相关新闻
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2022-6-62SX1-T
2SX1-T，全新原装现货0755-82732291当天发货或门市自取.QQ：1755232575/QQ：1157611585，微信号:87680558.
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DdatasheetPDF页码索引
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