| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET FAST SWITCHING N-CHANNEL SILICON POWER MOSFET | NEC 瑞萨 |   | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR FAST SWITCHING N-CHANNEL SILICON POWER MOS FET Features Suitable for switching power supplies, actuater controls, and pulse circuits 4 V Gate Drive - Logic level - Large Current Switching : ID(DC)=12A Low RDS(on) No second breakdown | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR FAST SWITCHING N-CHANNEL SILICON POWER MOS FET FEATURES Suitable for switching power supplies, actuater controls, and pulse circuits 4 V Gate Drive - Logic level - Large Current Switching : ID(DC)=27A Low RDS(on) No second breakdown | NEC 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID=21A@ TC=25℃ · Drain Source Voltage -VDSS=60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.085Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID=21A@ TC=25℃ · Drain Source Voltage -VDSS=100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.085Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR FAST SWITCHING N-CHANNEL SILICON POWER MOS FET Features Suitable for switching power supplies, actuater controls, and pulse circuits 4 V Gate Drive - Logic level - Low RDS(on) Large Current Switching : ID(DC)=21A No Second Breakdown | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR FAST SWITCHING N-CHANNEL SILICON POWER MOS FET FEATURES Suitable for switching power supplies, actuater controls, and pulse circuits 4 V Gate Drive - Logic level - Low RDS(on) Large current switching : ID(DC)=26A No Second Breakdown | NEC 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 55mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC | ISC 无锡固电 | | ||
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR(FAST SWITCHING N-CHANNEL SILICON POWER MOS FET) | RENESAS 瑞萨 | | ||
Fast switching N-channel silicon MOS field effect power transistor. | NEC 瑞萨 | | ||
Fast Switching Speed 文件：68.81 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Fast Switching Speed 文件：68.8 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK81产品属性
- 类型
描述
- Minimum Operating Temperature：
-55°C
- Maximum Power Dissipation：
2500mW
- Maximum Operating Temperature：
150°C
- Maximum Gate Source Voltage：
±20V
- Maximum Drain Source Voltage：
800V
- Maximum Continuous Drain Current：
5A
- Configuration：
Single
- Channel Type：
N
- Category：
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
26+ |
TO-220F |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
24+ |
60000 |
||||||
NEC |
2447 |
NA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
NEC |
24+/25+ |
396 |
原装正品现货库存价优 |
2SK81芯片相关品牌
2SK81规格书下载地址
2SK81参数引脚图相关
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- 5000
- 4921
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- 485接口
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- 303c
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- 2SK843
- 2SK833
- 2SK831
- 2SK83
- 2SK829
- 2SK827
- 2SK825
- 2SK824
- 2SK823
- 2SK821
- 2SK819
- 2SK818A
- 2SK818
- 2SK817
- 2SK815
- 2SK813
- 2SK812
- 2SK811
- 2SK810
- 2SK809A
- 2SK809
- 2SK808A
- 2SK808
- 2SK807
- 2SK806
- 2SK805
- 2SK804
- 2SK803
- 2SK802
- 2SK801
- 2SK800
- 2SK799
- 2SK798
- 2SK797
- 2SK796A
- 2SK796
- 2SK795
- 2SK794
- 2SK793
- 2SK792
- 2SK791
2SK81数据表相关新闻
2SMPP-02
优势渠道
2023-2-162V7002LT1G中文产品资料功能描述
2V7002LT1G中文产品资料
2022-6-62SX1-T
2SX1-T，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-102SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
2020-11-122SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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