型号 功能描述 生产厂家 企业 LOGO 操作

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET

FAST SWITCHING N-CHANNEL SILICON POWER MOSFET

NEC

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET Features Suitable for switching power supplies, actuater controls, and pulse circuits 4 V Gate Drive - Logic level - Large Current Switching : ID(DC)=12A Low RDS(on) No second breakdown

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET FEATURES Suitable for switching power supplies, actuater controls, and pulse circuits 4 V Gate Drive - Logic level - Large Current Switching : ID(DC)=27A Low RDS(on) No second breakdown

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET Features Suitable for switching power supplies, actuater controls, and pulse circuits 4 V Gate Drive - Logic level - Low RDS(on) Large Current Switching : ID(DC)=21A No Second Breakdown

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET FEATURES Suitable for switching power supplies, actuater controls, and pulse circuits 4 V Gate Drive - Logic level - Low RDS(on) Large current switching : ID(DC)=26A No Second Breakdown

NEC

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 55mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

ISC

无锡固电

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR(FAST SWITCHING N-CHANNEL SILICON POWER MOS FET)

RENESAS

瑞萨

Fast switching N-channel silicon MOS field effect power transistor.

NEC

瑞萨

Fast Switching Speed

文件:68.81 Kbytes Page:2 Pages

ISC

无锡固电

Fast Switching Speed

文件:68.8 Kbytes Page:2 Pages

ISC

无锡固电

2SK81产品属性

  • 类型

    描述

  • 型号

    2SK81

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

更新时间:2025-12-25 13:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
TO-220F
6430
原装现货/欢迎来电咨询
PANASONIC/松下
24+
TO-3P
60000
全新原装现货
T
23+
TO-3P
8450
原厂授权代理,海外优势订货渠道。可提供大量库存,详
PANASON/松下
24+
NA/
450
优势代理渠道,原装正品,可全系列订货开增值税票
MAT
23+
TO-3P
8000
只做原装现货
NEC
2447
NA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
PANASONIC/松下
23+
TO-3P
50000
全新原装正品现货,支持订货
24+
60000
松下
22+
TO-3P
20000
公司只有原装 品质保证
MAT
TO-3P
22+
6000
十年配单,只做原装

2SK81数据表相关新闻

  • 2SMPP-02

    优势渠道

    2023-2-16
  • 2V7002LT1G中文产品资料功能描述

    2V7002LT1G中文产品资料

    2022-6-6
  • 2SX1-T

    2SX1-T,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.

    2021-2-10
  • 2SK508G-K51-AE3-R

    属性 参数值 商品目录 结型场效应晶体管(JFET) 连续漏极电流(Id)(25°C 时) 50mA 漏源电压(Vdss) 15V 类型 N 沟道 最大功率耗散(Ta=25°C) 200mW

    2020-11-12
  • 2SK3313

    2SK3313,全新原装当天发货或门市自取0755-82732291.

    2020-3-28
  • 2SK3591-01R

    2SK3591-01R,全新原装当天发货或门市自取0755-82732291.

    2020-3-28