N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

DESCRIPTION The 2SK800 is N-channel MOS Field Effect Power Transistor designed for converters. FEATURES ● Suitable for switching power supplies, actuater controls, and pulse circuits ● Low RDS(on) ● No second breakdown

MOS FIELD EFFECT TRANSISTOR

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET FEATURES Suitable for switching power supplies, actuater controls and pulse circuits. 4 V Gate Drive - Logic level - Low RDS(on) No second breakdown

MOS FIELD EFFECT TRANSISTOR

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET

Features Suitable for switching power supplies acturter controls and pulse circuits 4V Gate Drive - Logic level - Low RDS(on) No second breakdown

SILICON N-CHANNEL POWER F-MOS FET

Silicon N-channel Power F-MOS FET

Features ● Low ON resistance RDS(on) : RDS(on) = 1.8Ω (typ.) ● High switching rate : tf = 40ns (typ.) ● No secondary breakdown ● High breakdown voltage Applications ● No contact relay ● Solenoid drive ● Motor drive ● Control equipment ● Switching power source

Fast Switching Speed

DESCRIPTION • Drain Current –ID=3A@ TC=25℃ • Drain Source Voltage- : VDSS=600V(Min) • Fast Switching Speed APPLICATIONS • Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

Silicon N-channel Power F-MOS FET

Silicon N-channel Power F-MOS FET

Silicon N-channel Power F-MOS FET

Features ● Low ON resistance RDS(on) : RDS(on) = 1.5Ω (typ.) ● High switching rate : tf = 85ns (typ.) ● No secondary breakdown ● High breakdown voltage, large power Applications ● No contact relay ● Solenoid drive ● Motor drive ● Control equipment ● Switching power source

Silicon N-channel Power F-MOS FET

Features ● Low ON resistance RDS(on) : RDS(on) = 1.5Ω (typ.) ● High switching rate : tf = 85ns (typ.) ● No secondary breakdown ● High breakdown voltage, large power Applications ● No contact relay ● Solenoid drive ● Motor drive ● Control equipment ● Switching power source

Fast Switching Speed

DESCRIPTION • Drain Current –ID=5A@ TC=25℃ • Drain Source Voltage- : VDSS=900V(Min) • Fast Switching Speed APPLICATIONS • Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

MOSFET SMALL SIGNAL N-CHANNEL 60V, 310mA

文件：610.47 Kbytes Page：6 Pages

FET

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET

Drain Current ?밒D=8A@ TC=25C

文件：66.67 Kbytes Page：2 Pages

Fast Switching Speed

文件：64.319 Kbytes Page：2 Pages

Fast Switching Speed

文件：65.22 Kbytes Page：2 Pages

Fast Switching Speed

文件：65.209 Kbytes Page：2 Pages

Fast Switching Speed

文件：68.07 Kbytes Page：2 Pages

Fast Switching Speed

文件：65.209 Kbytes Page：2 Pages