位置：首页 > IC中文资料第5754页 > 2SK80
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR DESCRIPTION The 2SK800 is N-channel MOS Field Effect Power Transistor designed for converters. FEATURES ● Suitable for switching power supplies, actuater controls, and pulse circuits ● Low RDS(on) ● No second breakdown | NEC 瑞萨 |   | ||
MOS FIELD EFFECT TRANSISTOR FAST SWITCHING N-CHANNEL SILICON POWER MOS FET FEATURES Suitable for switching power supplies, actuater controls and pulse circuits. 4 V Gate Drive - Logic level - Low RDS(on) No second breakdown | NEC 瑞萨 | | ||
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET Features Suitable for switching power supplies acturter controls and pulse circuits 4V Gate Drive - Logic level - Low RDS(on) No second breakdown | NEC 瑞萨 | | ||
SILICON N-CHANNEL POWER F-MOS FET
| Panasonic 松下 | | ||
Silicon N-channel Power F-MOS FET Features ● Low ON resistance RDS(on) : RDS(on) = 1.8Ω (typ.) ● High switching rate : tf = 40ns (typ.) ● No secondary breakdown ● High breakdown voltage Applications ● No contact relay ● Solenoid drive ● Motor drive ● Control equipment ● Switching power source | Panasonic 松下 | | ||
Fast Switching Speed DESCRIPTION • Drain Current –ID=3A@ TC=25℃ • Drain Source Voltage- : VDSS=600V(Min) • Fast Switching Speed APPLICATIONS • Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. | ISC 无锡固电 | | ||
Silicon N-channel Power F-MOS FET
| Panasonic 松下 | | ||
Silicon N-channel Power F-MOS FET
| Panasonic 松下 | | ||
Silicon N-channel Power F-MOS FET Features ● Low ON resistance RDS(on) : RDS(on) = 1.5Ω (typ.) ● High switching rate : tf = 85ns (typ.) ● No secondary breakdown ● High breakdown voltage, large power Applications ● No contact relay ● Solenoid drive ● Motor drive ● Control equipment ● Switching power source | Panasonic 松下 | | ||
Silicon N-channel Power F-MOS FET Features ● Low ON resistance RDS(on) : RDS(on) = 1.5Ω (typ.) ● High switching rate : tf = 85ns (typ.) ● No secondary breakdown ● High breakdown voltage, large power Applications ● No contact relay ● Solenoid drive ● Motor drive ● Control equipment ● Switching power source | Panasonic 松下 | | ||
Fast Switching Speed DESCRIPTION • Drain Current –ID=5A@ TC=25℃ • Drain Source Voltage- : VDSS=900V(Min) • Fast Switching Speed APPLICATIONS • Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. | ISC 无锡固电 | | ||
MOSFET SMALL SIGNAL N-CHANNEL 60V, 310mA 文件：610.47 Kbytes Page：6 Pages | AITSEMI 创瑞科技 | | ||
MOS FIELD EFFECT TRANSISTOR | RENESAS 瑞萨 | | ||
FET | AITSEMI 创瑞科技 | | ||
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET | RENESAS 瑞萨 | | ||
Drain Current ?밒D=8A@ TC=25C 文件：66.67 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Fast Switching Speed 文件：64.319 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Fast Switching Speed 文件：65.22 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Fast Switching Speed 文件：65.209 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Fast Switching Speed 文件：68.07 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Fast Switching Speed 文件：65.209 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK80产品属性
- 类型
描述
- 型号
2SK80
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
松下 |
24+ |
TO-3P |
6430 |
原装现货/欢迎来电咨询 |
|||
NEC |
23+ |
TO126 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
NEC |
24+ |
60000 |
|||||
PANASONIC |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
PANASONIC/松下 |
22+ |
6000 |
220 |
十年配单,只做原装 |
|||
PANASONIC/松下 |
2023+ |
TO-3P |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
松下 |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
PANASONIC/松下 |
17+ |
TO-3P |
28 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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2SK80规格书下载地址
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