N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance | yfs | = 1200 µS TYP. (VDS = 5 V, ID = 0 µA) • Low capacitance Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz) • Includes diode and high resistance at G - S

Field Effect Transistor

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JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance | yfs | = 1200 μS TYP. (VDS = 5 V, ID = 0 μA) • Low capacitance Ciss = 4.5 pF (VDS =