型号 功能描述 生产厂家 企业 LOGO 操作
2SK414

SILICON N-CHANNEL MOS FET

文件:153.47 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2SK414

Fast Switching Speed

文件:66.97 Kbytes Page:2 Pages

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4143 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low input

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4143 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low input

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 7.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • Low i

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 7.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • Low i

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 7.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • Low i

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 5300 pF TYP.

RENESAS

瑞萨

N-channel MOSFET 60 V, 84 A, 10 mΩ

Description The 2SK4145A is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 3310 pF TYP. (VDS = 10 V, VGS = 0 V) • High current ID(DC) =

RENESAS

瑞萨

N-channel MOSFET 60 V, 84 A, 10 mΩ

Description The 2SK4145A is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 3310 pF TYP. (VDS = 10 V, VGS = 0 V) • High current ID(DC) =

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low input capacitance Ciss = 5300 pF TYP.

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance ⎯ Ciss = 3500 pF TYP. (VDS = 10 V)

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

Description The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance ⎯ Ciss = 3500 pF TYP. (VDS = 10 V)

RENESAS

瑞萨

Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SK4147 is a switching element that is most suitable for use in DC-DC converter whose DC input voltage is 24 to 48 V. Having low on-resistance, excelling in the switching characteristics, and providing the small surface mounting outline, the 2SK4147 is ideal for use in high-spee

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK4148 is a switching element that is most suitable for use in DC-DC converter whose DC input voltage is 24 to 48 V. Having low on-resistance, and excelling in the switching characteristics, the 2SK4148 is ideal for use in high-speed switching. DESCRIPTION The 2SK4148 is a

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:323.58 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

文件:2.13779 Mbytes Page:8 Pages

VBSEMI

微碧半导体

SWITCHING N-CHANNEL POWER MOS FET

文件:198.52 Kbytes Page:8 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:198.52 Kbytes Page:8 Pages

NEC

瑞萨

N-Channel 60 V (D-S) MOSFET

文件:986.82 Kbytes Page:7 Pages

VBSEMI

微碧半导体

SWITCHING N-CHANNEL POWER MOS FET

文件:328.34 Kbytes Page:10 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:324.06 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:269.85 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

文件:1.28923 Mbytes Page:7 Pages

VBSEMI

微碧半导体

SWITCHING N-CHANNEL POWER MOS FET

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:332.83 Kbytes Page:2 Pages

ISC

无锡固电

Old Company Name in Catalogs and Other Documents

RENESAS

瑞萨

SWITCHING N-CHANNEL MOSFET

RENESAS

瑞萨

2SK414产品属性

  • 类型

    描述

  • 型号

    2SK414

  • 功能描述

    TRANSISTOR | MOSFET | N-CHANNEL | 160V V(BR)DSS | 8A I(D) | TO-247VAR

更新时间:2025-11-23 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
24+
NA/
3377
原装现货,当天可交货,原型号开票
HITACHI/日立
24+
TO 3P
158528
明嘉莱只做原装正品现货
NEC
25+23+
TO-220
25245
绝对原装正品全新进口深圳现货
RENESAS/瑞萨
2025+
SOT-23
5000
原装进口价格优 请找坤融电子!
RENESAS
24+
SMD
30000
只做原装!公司现货库存!QQ:2369405325
24+
2000
NEC
25+
TO-263
10000
全新原装正品支持含税
RENESAS
24+
TO220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
RENESAS/瑞萨
24+
SOT-23
9600
原装现货,优势供应,支持实单!
NEC
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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