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2SK408价格
参考价格：￥0.5850
型号：2SK4083GULBF 品牌：Panasonic 备注：这里有2SK408多少钱，2025年最近7天走势，今日出价，今日竞价，2SK408批发/采购报价，2SK408行情走势销售排行榜，2SK408报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK408 | SILICON N CHANNEL MOS FET HF/VHF POWER AMPLIFIER | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SK408 | SILICON N-CHANNEL MOS FET | HitachiHitachi Semiconductor 日立日立公司 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4080 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4080 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4080 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4080 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4081 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4082 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4082 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 1.8 A | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4082 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 1.8 A | NEC 瑞萨 | | ||
N-Channel 650 V (D-S) MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC | VBSEMI 微碧半导体 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4082 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on | RENESAS 瑞萨 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • High reliability (Adoption of HVP process). • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee. | SANYO 三洋 | | ||
N-Channel 30-V (D-S) MOSFET 文件：960.01 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：399.55 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 30-V (D-S) MOSFET 文件：960.01 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：239.4 Kbytes Page：8 Pages | NEC 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：331.29 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：399.15 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：239.4 Kbytes Page：8 Pages | NEC 瑞萨 | | ||
N-Channel 30-V (D-S) MOSFET 文件：960.01 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：239.4 Kbytes Page：8 Pages | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：239.4 Kbytes Page：8 Pages | NEC 瑞萨 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08693 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：239.4 Kbytes Page：8 Pages | NEC 瑞萨 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08667 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：324.13 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
SWITCHING N-CHANNEL POWER MOS FET | RENESAS 瑞萨 | | ||
Silicon N-channel junction FET | Panasonic 松下 | | ||
isc N-Channel MOSFET Transistor 文件：323.75 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：56.07 Kbytes Page：5 Pages | SANYO 三洋 | | ||
General-Purpose Switching Device Applications 文件：72.75 Kbytes Page：5 Pages | SANYO 三洋 | | ||
isc N-Channel MOSFET Transistor 文件：324 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：56.16 Kbytes Page：5 Pages | SANYO 三洋 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：343.67 Kbytes Page：5 Pages | SANYO 三洋 | | ||
N-Channel Power MOSFET 文件：265.32 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
General-Purpose Switching Device Applications 文件：72.75 Kbytes Page：5 Pages | SANYO 三洋 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：343.67 Kbytes Page：5 Pages | SANYO 三洋 | | ||
N-Channel Power MOSFET 文件：265.32 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10611 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：324.39 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：324.28 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：56.52 Kbytes Page：5 Pages | SANYO 三洋 | | ||
General-Purpose Switching Device Applications 文件：366.06 Kbytes Page：7 Pages | SANYO 三洋 | | ||
N-Channel Power MOSFET 文件：269.49 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
General-Purpose Switching Device Applications 文件：73.23 Kbytes Page：5 Pages | SANYO 三洋 | | ||
General-Purpose Switching Device Applications 文件：73.23 Kbytes Page：5 Pages | SANYO 三洋 | | ||
General-Purpose Switching Device Applications 文件：366.06 Kbytes Page：7 Pages | SANYO 三洋 | | ||
N-Channel Power MOSFET 文件：269.49 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
N-Channel Power MOSFET 文件：257.92 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：56.15 Kbytes Page：5 Pages | SANYO 三洋 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.30872 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
isc N-Channel MOSFET Transistor 文件：324.14 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel Power MOSFET 文件：257.92 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
General-Purpose Switching Device Applications 文件：72.94 Kbytes Page：5 Pages | SANYO 三洋 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device 文件：56.2 Kbytes Page：5 Pages | SANYO 三洋 | | ||
isc N-Channel MOSFET Transistor 文件：324.38 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
General-Purpose Switching Device Applications 文件：72.94 Kbytes Page：5 Pages | SANYO 三洋 | |
2SK408产品属性
- 类型
描述
- 型号
2SK408
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
SILICON N CHANNEL MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
2010+ |
TO251 |
50000 |
只做全新原装诚信经营现货长期供应 |
|||
ON |
25+ |
TO-TO-220FP |
37650 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
R |
24+ |
TO-252 |
5000 |
全现原装公司现货 |
|||
SANYO/三洋 |
24+ |
TO220F |
39197 |
郑重承诺只做原装进口现货 |
|||
SANYO |
23+24 |
TO-220F |
16790 |
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC |
|||
SANYO |
25+23+ |
TO-220 |
27131 |
绝对原装正品全新进口深圳现货 |
|||
PANASONIC/松下 |
24+ |
TSSSMini3-F2 |
9600 |
原装现货,优势供应,支持实单! |
|||
SANYO |
23+ |
TO220F |
2597 |
原厂原装正品 |
|||
Panasonic |
24+ |
34300 |
原装现货假一赔十 |
||||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
2SK408规格书下载地址
2SK408参数引脚图相关
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- 2SK3857TK-B
- 2SK3857TK-A
- 2SK3845(Q)
- 2SK3816-DL-1E
- 2SK3812-ZP-E1-AY
2SK408数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SX1-T
2SX1-T，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-102SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
2020-11-122SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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