2SK4070-S15-AY集成电路资料批发采购价格瑞萨-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

型号	功能描述	生产厂家企业	LOGO
2SK4070	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on) = 11 Ω MAX. (VGS = 10 V, ID = 0.5 A)	NEC 瑞萨	NEC
2SK4070	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)	RENESAS 瑞萨	RENESAS
2SK4070-S15-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)	RENESAS 瑞萨	RENESAS
2SK4070-S15-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on) = 11 Ω MAX. (VGS = 10 V, ID = 0.5 A)	NEC 瑞萨	NEC
2SK4070-S27-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)	RENESAS 瑞萨	RENESAS
2SK4070-ZK-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)	RENESAS 瑞萨	RENESAS
2SK4070-ZK-E1-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on) = 11 Ω MAX. (VGS = 10 V, ID = 0.5 A)	NEC 瑞萨	NEC
2SK4070-ZK-E1-AY	N-Channel 650 V (D-S) MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC	VBSEMI 微碧半导体	VBSEMI
2SK4070-ZK-E2-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on) = 11 Ω MAX. (VGS = 10 V, ID = 0.5 A)	NEC 瑞萨	NEC
2SK4070-ZK-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)	RENESAS 瑞萨	RENESAS
2SK4071	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL MOSFET DESCRIPTION The 2SK4071 is the best switching element for the DC-DC converter usage to 24 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance, and is the best for the high-speed switching usage. FEATURES	RENESAS 瑞萨	RENESAS
2SK4071-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL MOSFET DESCRIPTION The 2SK4071 is the best switching element for the DC-DC converter usage to 24 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance, and is the best for the high-speed switching usage. FEATURES	RENESAS 瑞萨	RENESAS
2SK4071-T-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL MOSFET DESCRIPTION The 2SK4071 is the best switching element for the DC-DC converter usage to 24 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance, and is the best for the high-speed switching usage. FEATURES	RENESAS 瑞萨	RENESAS
2SK4075	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2900 pF T	RENESAS 瑞萨	RENESAS
2SK4075B	SWITCHING N-CHANNEL POWER MOS FET SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075B is N-channel MOS FET designed for high current switching applications. FEATURES •Low on-state resistance RDS(on)1= 7.9 mΩMAX. (VGS= 10 V, ID= 25 A) RDS(on)2= 10 mΩMAX. (VGS= 4.5 V, ID= 13 A) •Low Ciss: Ciss= 2230	RENESAS 瑞萨	RENESAS
2SK4075B-ZK-E1-AY	SWITCHING N-CHANNEL POWER MOS FET SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075B is N-channel MOS FET designed for high current switching applications. FEATURES •Low on-state resistance RDS(on)1= 7.9 mΩMAX. (VGS= 10 V, ID= 25 A) RDS(on)2= 10 mΩMAX. (VGS= 4.5 V, ID= 13 A) •Low Ciss: Ciss= 2230	RENESAS 瑞萨	RENESAS
2SK4075B-ZK-E2-AY	SWITCHING N-CHANNEL POWER MOS FET SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075B is N-channel MOS FET designed for high current switching applications. FEATURES •Low on-state resistance RDS(on)1= 7.9 mΩMAX. (VGS= 10 V, ID= 25 A) RDS(on)2= 10 mΩMAX. (VGS= 4.5 V, ID= 13 A) •Low Ciss: Ciss= 2230	RENESAS 瑞萨	RENESAS
2SK4075-ZK-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2900 pF T	RENESAS 瑞萨	RENESAS
2SK4075-ZK-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2900 pF T	RENESAS 瑞萨	RENESAS
2SK4076	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4076 is N-channel MOS FET designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 16 mΩ MAX. (VGS = 10 V, ID = 17.5 A) RDS(on)2 = 25 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Low Ciss: Ciss = 1200 pF TYP	RENESAS 瑞萨	RENESAS
2SK4076-ZK-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4076 is N-channel MOS FET designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 16 mΩ MAX. (VGS = 10 V, ID = 17.5 A) RDS(on)2 = 25 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Low Ciss: Ciss = 1200 pF TYP	RENESAS 瑞萨	RENESAS
2SK4076-ZK-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4076 is N-channel MOS FET designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 16 mΩ MAX. (VGS = 10 V, ID = 17.5 A) RDS(on)2 = 25 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Low Ciss: Ciss = 1200 pF TYP	RENESAS 瑞萨	RENESAS
2SK4077	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4077 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 35 mΩ MAX. (VGS = 4.5 V, ID = 5 A) • Low inpu	RENESAS 瑞萨	RENESAS
2SK4077-ZK-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4077 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 35 mΩ MAX. (VGS = 4.5 V, ID = 5 A) • Low inpu	RENESAS 瑞萨	RENESAS
2SK4077-ZK-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4077 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 35 mΩ MAX. (VGS = 4.5 V, ID = 5 A) • Low inpu	RENESAS 瑞萨	RENESAS
2SK4078	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 13 A) • Low input capacitance Ciss = 2300 pF TYP.	RENESAS 瑞萨	RENESAS
2SK4078-ZK-E1-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 13 A) • Low input capacitance Ciss = 2300 pF TYP.	RENESAS 瑞萨	RENESAS
2SK4078-ZK-E2-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 13 A) • Low input capacitance Ciss = 2300 pF TYP.	RENESAS 瑞萨	RENESAS
2SK4070D	isc N-Channel MOSFET Transistor 文件：330.88 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK4070I	isc N-Channel MOSFET Transistor 文件：398.74 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK4070-ZK-E2-AY	N-Channel 650 V (D-S) MOSFET 文件：1.08598 Mbytes Page：9 Pages	VBSEMI 微碧半导体	VBSEMI
2SK4072	Silicon N-channel MOSFET	Panasonic 松下	Panasonic
2SK4073LS	N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：47.11 Kbytes Page：5 Pages	SANYO 三洋	SANYO
2SK4073LS	N-Channel Silicon MOSFET General-Purpose Switching Device Applications	ONSEMI 安森美半导体	ONSEMI
2SK4073LS	isc N-Channel MOSFET Transistor 文件：324.2 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK4074LS	isc N-Channel MOSFET Transistor 文件：324.04 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK4074LS	N-Channel Silicon MOSFET General-Purpose Switching Device Applications	ONSEMI 安森美半导体	ONSEMI
2SK4074LS	N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：61.51 Kbytes Page：5 Pages	SANYO 三洋	SANYO
2SK4075B	isc N-Channel MOSFET Transistor 文件：331.04 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK4075B-ZK	N-Channel 4 -V (D-S) MOSFET 文件：1.76403 Mbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI
2SK4076	N-Channel MOSFET uses advanced trench technology 文件：1.03056 Mbytes Page：5 Pages	DOINGTER 杜因特	DOINGTER
2SK4076	isc N-Channel MOSFET Transistor 文件：330.83 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK4078	SWITCHING N-CHANNEL POWER MOS FET 文件：184.33 Kbytes Page：8 Pages	NEC 瑞萨	NEC
2SK4078	N-Channel MOSFET uses advanced trench technology 文件：2.6117 Mbytes Page：5 Pages	DOINGTER 杜因特	DOINGTER
2SK4078B	SWITCHING N-CHANNEL POWER MOS FET 文件：296.5 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK4078B-ZK-E1-AY	SWITCHING N-CHANNEL POWER MOS FET 文件：296.5 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK4078B-ZK-E2-AY	SWITCHING N-CHANNEL POWER MOS FET 文件：296.5 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK4078-ZK	isc N-Channel MOSFET Transistor 文件：331.34 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK4078-ZK-E1-AY	SWITCHING N-CHANNEL POWER MOS FET 文件：184.33 Kbytes Page：8 Pages	NEC 瑞萨	NEC
2SK4078-ZK-E2-AY	SWITCHING N-CHANNEL POWER MOS FET 文件：184.33 Kbytes Page：8 Pages	NEC 瑞萨	NEC

2SK407产品属性

类型
描述
型号
2SK407
制造商
NEC
制造商全称
NEC
功能描述
MOS FIELD EFFECT TRANSISTOR

2SK407供应商更多...

更新时间：2025-12-25 12:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	2SK4070-S15-AY	RENESAS	24+	TO251	5000	全新原装正品,现货销售	询价
深圳市得捷芯城科技有限公司	2SK4070-S15-AY	NEC	24+	NA/	3960	优势代理渠道,原装正品,可全系列订货开增值税票	询价
洪芯国际半导体（深圳）有限公司	2SK4070-S15-AY	RENESAS	25+	SSOP-16	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
深圳市美思瑞电子科技有限公司	2SK4070-S15-AY	RENESAS/瑞萨	22+	TO-251	7840	现货,原厂原装假一罚十!	询价
深圳市凌旭科技有限公司	2SK4070-S15-AY	NEC	2016+	TO-251	8190	只做原装,假一罚十,公司可开17%增值税发票!	询价
艾睿（深圳）半导体有限公司	2SK4070-S15-AY	NEC	2447	TO-251	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市莱克讯科技有限公司	2SK4070-S15-AY	TOSHIBA/东芝	1922+	TO-251	8900	公司原装现货特价长期供货欢迎来电咨询	询价
深圳市威尔健半导体有限公司	2SK4070-S15-AY	NEC	23+	TO-251	50000	全新原装正品现货,支持订货	询价
深圳市诺美思科技有限公司	2SK4070-S15-AY	RENESAS		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市创新迹电子有限公司	2SK4070-S15-AY	RENESAS	25+	TO251	8000	只有原装	询价

2SK407芯片相关品牌

2SK407规格书下载地址

2SK407参数引脚图相关

2SK407数据表相关新闻

2SMPP-02
优势渠道
2023-2-16
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-24
2SX1-T
2SX1-T，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-10
2SK508G-K51-AE3-R
属性参数值商品目录结型场效应晶体管（JFET）连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道最大功率耗散（Ta=25°C） 200mW
2020-11-12
2SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-28
2SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

2SK407产品属性

2SK407供应商更多...

2SK407芯片相关品牌

2SK407规格书下载地址

2SK407参数引脚图相关

2SK407数据表相关新闻

2SMPP-02

2SK3105-T1B-A找代理商上深圳百域芯科技

2SX1-T

2SK508G-K51-AE3-R

2SK3313

2SK3591-01R

DdatasheetPDF页码索引