Chopper Regulator, DC/DC Converter and Motor Drive Applications

Chopper Regulator, DC-DC Converter and Motor Drive Applications • Low drain−source ON-resistance: RDS (ON) = 4.2 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.7 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Chopper Regulator, DC/DC Converter and Motor Drive Applications

Chopper Regulator, DC-DC Converter and Motor Drive Applications Low drain−source ON-resistance: RDS (ON) = 1.7 Ω (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Power MOSFET

1.Scope This specifies Fuji Power MOSFET 2SK4005-01MR 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.Outview TO-220F Outview See to 8/18 page

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain−source ON-resistance : RDS (ON) = 0.33 Ω (typ.) • High forward transfer admittance : |Yfs| = 8.5 S (typ.) • Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

丝印代码：K4013；Silicon N Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON)= 1.35 Ω(typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 640 V) • Enhancement-model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon N-Channel MOS Type DC/DC Converter, Relay Drive and Motor Drive Applications

DC-DC Converter, Relay Drive and Motor Drive Applications ● Low drain-source ON-resistance : RDS (ON) = 1.6 Ω (typ.) ● High forward transfer admittance : |Yfs| = 5.0 S (typ.) ● Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.60 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.4 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications

Chopper Regulator, DC/DC Converter and Motor Drive Applications. 1. 4 V gate drive 2. Low drain−source ON-resistance : RDS (ON)= 0.07 Ω (typ.) 3. High forward transfer admittance : |Yfs| = 6.0 S (typ.) 4. Low leakage current : IDSS= 100 μA (max) (VDS= 60 V) 5. Enhancement mode

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications

Chopper Regulator, DC-DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON-resistance: RDS (ON)= 0.28 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IDSS= 100 μA (max) (VDS= 100 V) Enhancement mode: Vth= 0.8 to 2.0

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications

Chopper Regulators, DC-DC Converters and Motor Drive Applications • 4-V gate drive • Low drain-source ON-resistance: RDS (ON) = 0.56 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 200 V) • Enhancement mode: Vth = 1.5 to 3.5

Switching Regulator and DC/DC Converter Applications Motor Drive Applications

Switching Regulators and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 0.8 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 250 V) • Enhancement mode: Vth = 1.5

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Switching Regulator, DC/DC Converter and Motor Drive Applications

Switching Regulators, DC-DC Converters and Motor Drive Applications • 4-V gate drive • Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.2 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 250 V) • Enhancement mode: Vth = 1.5 to 3.

Switching Regulator, DC/DC Converter

Switching Regulator, DC/DC Converter • 4 V gate drive • Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Switching Regulator Applications

Switching Regulator Applications Features • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) • High forward transfer admittance: |Yfs| = 0.85 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDSS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK4027 is suitable for converter of ECM. FEATURES • High gain −1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK4027 is suitable for converter of ECM. FEATURES • High gain −1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK4028 is suitable for converter of ECM. FEATURES • High gain −1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Ultra thin thickness p

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK4028 is suitable for converter of ECM. FEATURES • High gain −1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Ultra thin thickness package t = 0.3 mm TYP.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.75Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Chopper Regulator, DC/DC Converter and Motor Drive Applications

Chopper Regulator, DC/DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON-resistance : RDS (ON)= 0.07 Ω (typ.) High forward transfer admittance : |Yfs| = 6.0 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 60 V) Enhancement mode : Vth= 0.8~2.

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Switching Regulator, DC-DC Converter Applications Motor Drive Applications

Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.2 mΩ(typ.) • High forward transfer admittance: |Yfs| = 110 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 60 V) • Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, I

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION 2SK4035 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance and because it is the small size surface mounting ext

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION 2SK4035 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance and because it is the small size surface mounting ext

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4036 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance, and is the best for the high-speed switching usa

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4036 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance, and is the best for the high-speed switching usa

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

470 MHz Band Amplifier Applications

470 MHz Band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this doc

HF Amp, AF Amp Applications

HF Amplifier, AF Amplifier Applications Features • Large |yfs|. • Low noise. • Small Crss.

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK4041 is suitable for converter of ECM. FEATURES • High gain −1.0 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Super Low noise −115 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Super small area

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.7 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

N-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • Low ON-resistance. • 2.5V drive. • Avalanche resistance guarantee.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=20A@ TC=25℃ · Drain Source Voltage -VDSS=30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.021Ω(Max)@VGS= 4V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • Low ON-resistance. • Load switching applications. • Avalanche resistance guarantee.

SILICON N CHANNEL MOS TYPE (7T-MOS)

AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. FEATURES . High Breakdown Voltage . High Forward Transfoer Admittance . Complementary to 2SJ115 VDSS=160V lYf s |=2.0S (Typ.)

2SK405

Silicon N Channel MOS type

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on