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2SK40价格

参考价格：￥1.7173

型号：2SK4017(Q) 品牌：TOSHIBA 备注：这里有2SK40多少钱，2025年最近7天走势，今日出价，今日竞价，2SK40批发/采购报价，2SK40行情走势销售排行榜，2SK40报价。

型号	功能描述	生产厂家企业	LOGO
2SK4002	Chopper Regulator, DC/DC Converter and Motor Drive Applications Chopper Regulator, DC-DC Converter and Motor Drive Applications • Low drain−source ON-resistance: RDS (ON) = 4.2 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 1.7 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10	TOSHIBA 东芝	TOSHIBA
2SK4002	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4003	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4003	Chopper Regulator, DC/DC Converter and Motor Drive Applications Chopper Regulator, DC-DC Converter and Motor Drive Applications Low drain−source ON-resistance: RDS (ON) = 1.7 Ω (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK4005-01MR	Power MOSFET 1.Scope This specifies Fuji Power MOSFET 2SK4005-01MR 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.Outview TO-220F Outview See to 8/18 page	Fuji 富士通	Fuji
2SK4012	Silicon N-Channel MOS Type Switching Regulator Applications Switching Regulator Applications • Low drain−source ON-resistance : RDS (ON) = 0.33 Ω (typ.) • High forward transfer admittance : \|Yfs\| = 8.5 S (typ.) • Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK4012	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4013	Silicon N Channel MOS Type Switching Regulator Applications Switching Regulator Applications • Low drain-source ON resistance: RDS (ON)= 1.35 Ω(typ.) • High forward transfer admittance: \|Yfs\| = 5.0 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 640 V) • Enhancement-model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK4013	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4014	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4014	Silicon N-Channel MOS Type DC/DC Converter, Relay Drive and Motor Drive Applications DC-DC Converter, Relay Drive and Motor Drive Applications ● Low drain-source ON-resistance : RDS (ON) = 1.6 Ω (typ.) ● High forward transfer admittance : \|Yfs\| = 5.0 S (typ.) ● Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m	TOSHIBA 东芝	TOSHIBA
2SK4015	Silicon N-Channel MOS Type Switching Regulator Applications Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.60 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 7.4 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK4015	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4016	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4016	Silicon N-Channel MOS Type Switching Regulator Applications Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 10 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK4016Q	Switching Regulator Applications Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 10 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK4017	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4017	Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications. 1. 4 V gate drive 2. Low drain−source ON-resistance : RDS (ON)= 0.07 Ω (typ.) 3. High forward transfer admittance : \|Yfs\| = 6.0 S (typ.) 4. Low leakage current : IDSS= 100 μA (max) (VDS= 60 V) 5. Enhancement mode	TOSHIBA 东芝	TOSHIBA
2SK4018	Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications Chopper Regulator, DC-DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON-resistance: RDS (ON)= 0.28 Ω (typ.) High forward transfer admittance: \|Yfs\| = 3.5 S (typ.) Low leakage current: IDSS= 100 μA (max) (VDS= 100 V) Enhancement mode: Vth= 0.8 to 2.0	TOSHIBA 东芝	TOSHIBA
2SK4018	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4019	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4020	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4020	Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications Chopper Regulators, DC-DC Converters and Motor Drive Applications • 4-V gate drive • Low drain-source ON-resistance: RDS (ON) = 0.56 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 200 V) • Enhancement mode: Vth = 1.5 to 3.5	TOSHIBA 东芝	TOSHIBA
2SK4021	Switching Regulator and DC/DC Converter Applications Motor Drive Applications Switching Regulators and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 0.8 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 250 V) • Enhancement mode: Vth = 1.5	TOSHIBA 东芝	TOSHIBA
2SK4021	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4022	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4022	Switching Regulator, DC/DC Converter and Motor Drive Applications Switching Regulators, DC-DC Converters and Motor Drive Applications • 4-V gate drive • Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 2.2 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 250 V) • Enhancement mode: Vth = 1.5 to 3.	TOSHIBA 东芝	TOSHIBA
2SK4023	Switching Regulator, DC/DC Converter Switching Regulator, DC/DC Converter • 4 V gate drive • Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 0.8 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID	TOSHIBA 东芝	TOSHIBA
2SK4023	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4026	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4026	Switching Regulator Applications Switching Regulator Applications Features • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) • High forward transfer admittance: \|Yfs\| = 0.85 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDSS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK4027	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK4027 is suitable for converter of ECM. FEATURES • High gain −1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)	NEC 瑞萨	NEC
2SK4027	JUNCTION FIELD EFFECT TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK4027 is suitable for converter of ECM. FEATURES • High gain −1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)	RENESAS 瑞萨	RENESAS
2SK4028	JUNCTION FIELD EFFECT TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK4028 is suitable for converter of ECM. FEATURES • High gain −1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Ultra thin thickness p	RENESAS 瑞萨	RENESAS
2SK4028	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK4028 is suitable for converter of ECM. FEATURES • High gain −1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Ultra thin thickness package t = 0.3 mm TYP.	NEC 瑞萨	NEC
2SK403	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.75Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK4033	Chopper Regulator, DC/DC Converter and Motor Drive Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON-resistance : RDS (ON)= 0.07 Ω (typ.) High forward transfer admittance : \|Yfs\| = 6.0 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 60 V) Enhancement mode : Vth= 0.8~2.	TOSHIBA 东芝	TOSHIBA
2SK4033	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4034	Switching Regulator, DC-DC Converter Applications Motor Drive Applications Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.2 mΩ(typ.) • High forward transfer admittance: \|Yfs\| = 110 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 60 V) • Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, I	TOSHIBA 东芝	TOSHIBA
2SK4034	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4035	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION 2SK4035 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance and because it is the small size surface mounting ext	RENESAS 瑞萨	RENESAS
2SK4035-A	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION 2SK4035 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance and because it is the small size surface mounting ext	RENESAS 瑞萨	RENESAS
2SK4036	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4036 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance, and is the best for the high-speed switching usa	RENESAS 瑞萨	RENESAS
2SK4036-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4036 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance, and is the best for the high-speed switching usa	RENESAS 瑞萨	RENESAS
2SK4037	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4037	470 MHz Band Amplifier Applications 470 MHz Band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this doc	TOSHIBA 东芝	TOSHIBA
2SK404	HF Amp, AF Amp Applications HF Amplifier, AF Amplifier Applications Features • Large \|yfs\|. • Low noise. • Small Crss.	SANYO 三洋	SANYO
2SK4041	JUNCTION FIELD EFFECT TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK4041 is suitable for converter of ECM. FEATURES • High gain −1.0 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Super Low noise −115 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Super small area	RENESAS 瑞萨	RENESAS
2SK4042	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK4042	Switching Regulator Applications Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.7 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK4043LS	N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Low ON-resistance. • 2.5V drive. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK4044	N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Low ON-resistance. • Load switching applications. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK405	2SK405 Silicon N Channel MOS type	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SK405	SILICON N CHANNEL MOS TYPE (7T-MOS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. FEATURES . High Breakdown Voltage . High Forward Transfoer Admittance . Complementary to 2SJ115 VDSS=160V lYf s \|=2.0S (Typ.)	TOSHIBA 东芝	TOSHIBA
2SK4057	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on	RENESAS 瑞萨	RENESAS
2SK4057-S27-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on	RENESAS 瑞萨	RENESAS
2SK4057-ZK-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on	RENESAS 瑞萨	RENESAS
2SK4057-ZK-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on	RENESAS 瑞萨	RENESAS
2SK4058	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on	RENESAS 瑞萨	RENESAS
2SK4058-S27-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on	RENESAS 瑞萨	RENESAS

2SK40供应商更多...

更新时间：2025-11-26 22:30:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市纳艾斯科技有限公司	2SK4080-ZK-E2-AY	RENESAS	24+	TO-252	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市金芯世纪电子有限公司	2SK4080-ZK-E2-AY	NEC	22+	SOT-252	100000	代理渠道/只做原装/可含税	询价
深圳市得捷芯城科技有限公司	2SK4087	SANYO/三洋	24+	NA/	14568	原装现货,当天可交货,原型号开票	询价
深圳市科芯源微电子有限公司	2SK4087其他被动元件	SANYO/三洋	23+	TO-220	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市明嘉莱科技有限公司	2SK408其他被动元件	HITACHI/日立	24+	TO 220	158174	明嘉莱只做原装正品现货	询价
深圳市科恒伟业电子有限公司	2SK4086LS	ON/安森美	2450+	TO-220F	9850	只做原装正品现货或订货假一赔十!	询价
深圳市润联芯城科技有限公司	2SK4083	PANASONIC/松下	23+	TSSSMini3-F2	50000	原装正品支持实单	询价
深圳市振宏微科技有限公司	2SK4083GTLBF	SOT-423	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市美思瑞电子科技有限公司	2SK4086	SANYO/三洋	22+	TO220F	12245	现货,原厂原装假一罚十!	询价
深圳市星宇佳科技有限公司	2SK4086LS	ON/安森美	11+	TO-220F	875		询价

2SK40芯片相关品牌

2SK40规格书下载地址

2SK40参数引脚图相关

2SK40数据表相关新闻

2SMPP-02
优势渠道
2023-2-16
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-24
2SX1-T
2SX1-T，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-10
2SK508G-K51-AE3-R
属性参数值商品目录结型场效应晶体管（JFET）连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道最大功率耗散（Ta=25°C） 200mW
2020-11-12
2SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-28
2SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28

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2SK40价格

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2SK40芯片相关品牌

2SK40规格书下载地址

2SK40参数引脚图相关

2SK40数据表相关新闻

2SMPP-02

2SK3105-T1B-A找代理商上深圳百域芯科技

2SX1-T

2SK508G-K51-AE3-R

2SK3313

2SK3591-01R

DdatasheetPDF页码索引