isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.75Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Fast Switching Speed

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Chopper Regulator, DC/DC Converter and Motor Drive Applications

Chopper Regulator, DC/DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON-resistance : RDS (ON)= 0.07 Ω (typ.) High forward transfer admittance : |Yfs| = 6.0 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 60 V) Enhancement mode : Vth= 0.8~2.

Switching Regulator, DC-DC Converter Applications Motor Drive Applications

Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.2 mΩ(typ.) • High forward transfer admittance: |Yfs| = 110 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 60 V) • Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, I

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION 2SK4035 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance and because it is the small size surface mounting ext

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION 2SK4035 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance and because it is the small size surface mounting ext

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4036 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance, and is the best for the high-speed switching usa

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4036 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance, and is the best for the high-speed switching usa

470 MHz Band Amplifier Applications

470 MHz Band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this doc

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

isc N-Channel MOSFET Transistor

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N-Channel 60 V (D-S) MOSFET

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Power MOSFET (N-ch single 30V VDSS 60V)

SWITCHING N-CHANNEL POWER MOSFET

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SWITCHING N-CHANNEL POWER MOSFET

SWITCHING N-CHANNEL POWER MOSFET

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Radio-frequency power MOSFET