型号 功能描述 生产厂家 企业 LOGO 操作
2SK399

Fast Switching Speed

文件:66.31 Kbytes Page:2 Pages

ISC

无锡固电

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3991 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 13.0

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3991 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3991 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3991 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 13.0

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3992 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 4.8

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3992 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3992 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Lo

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3992 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 4.8

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3993 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 3.8

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3993 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3993 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3993 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 3.8

NEC

瑞萨

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:326.96 Kbytes Page:2 Pages

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

文件:305.41 Kbytes Page:4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:305.41 Kbytes Page:4 Pages

Fuji

富士通

isc N-Channel MOSFET Transistor

文件:400.82 Kbytes Page:2 Pages

ISC

无锡固电

功率MOSFET 600V-700V

Fuji

富士通

isc N-Channel MOSFET Transistor

文件:400.98 Kbytes Page:2 Pages

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

文件:305.41 Kbytes Page:4 Pages

Fuji

富士通

SWITCHING N-CHANNEL POWER MOSFET

RENESAS

瑞萨

N-Channel 30-V (D-S) MOSFET

文件:959.92 Kbytes Page:8 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件:397.96 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:330.42 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFETs

RENESAS

瑞萨

N-Channel 30-V (D-S) MOSFET

文件:994.63 Kbytes Page:7 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件:399.1 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:331.55 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:398.83 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 30-V (D-S) MOSFET

文件:994.57 Kbytes Page:7 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件:331.28 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:323.62 Kbytes Page:2 Pages

ISC

无锡固电

Switching Regulator, DC/DC Converter Motor Drive Applications

文件:248.59 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N-Channel MOS Type Switching Regulator, DC/DC Converter Applications Motor Drive Applications

文件:255.13 Kbytes Page:6 Pages

TOSHIBA

东芝

Switching Regulator, DC/DC Converter Motor Drive Applications

文件:248.59 Kbytes Page:6 Pages

TOSHIBA

东芝

2SK399产品属性

  • 类型

    描述

  • 型号

    2SK399

  • 功能描述

    MOSFET N-CH 25V MP-3ZK/TO-252

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-12-25 8:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS(瑞萨)/IDT
24+
TO252
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
HITACHI/日立
24+
TO 3P
158380
明嘉莱只做原装正品现货
24+
26200
原装现货,诚信经营!
TOSHIBA/东芝
24+
NA/
3378
原装现货,当天可交货,原型号开票
HITACHI
25+
TO-3P
54648
百分百原装现货 实单必成 欢迎询价
TOS
20+
TO-220NIS
36900
原装优势主营型号-可开原型号增税票
NEC
2450+
SOT223
9850
只做原装正品现货或订货假一赔十!
RENESAS/瑞萨
新年份
TO-252
33288
原装正品现货,实单带TP来谈!
PANASONIC
原厂封装
9800
原装进口公司现货假一赔百
HIT
23+
TO-220
2000
专做原装正品,假一罚百!

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