型号 功能描述 生产厂家 企业 LOGO 操作

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low Ciss: Ciss = 3500

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 41 A) •

RENESAS

瑞萨

MOS Field Effect Transistor

Features Low On-state resistance RDS(on)1 = 8.0mÙ MAX. (VGS = 10 V, ID = 41A) RDS(on)2 = 10 mÙ MAX. (VGS = 4.5 V, ID = 41 A) Low C iss: C iss =3500 pF TYP.

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 41 A) •

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low Ciss: Ciss = 3500

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3901 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 19

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3901 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) •

RENESAS

瑞萨

MOS Field Effect Transistor

Features ● Low On-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30A) ● Low C iss: C iss =1950 pF TYP.

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3901 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) •

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3901 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 16.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 19

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3902 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 26 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 1200 p

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3902 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 26 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Lo

RENESAS

瑞萨

MOS Field Effect Transistor

Features Low On-state resistance RDS(on)1 = 21mÙ MAX. (VGS = 10 V, ID = 15A) RDS(on)2 = 26 mÙ MAX. (VGS = 4.5 V, ID = 15A) Low C iss: C iss =1200 pF TYP.

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3902 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 26 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Lo

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3902 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low On-state resistance RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 26 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 1200 p

NEC

瑞萨

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:401.04 Kbytes Page:2 Pages

ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

RENESAS

瑞萨

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANSISTOR 分立半导体产品 晶体管 - FET,MOSFET - 单个

ETC

知名厂家

SWITCHING N-CHANNEL POWER MOS FET

文件:284.8 Kbytes Page:10 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:401.43 Kbytes Page:2 Pages

ISC

无锡固电

Nch Single Power Mosfet 60V 60A 13Mohm Mp-25Zk/To-263

RENESAS

瑞萨

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANSISTOR 分立半导体产品 晶体管 - FET,MOSFET - 单个

ETC

知名厂家

SWITCHING N-CHANNEL POWER MOS FET

文件:284.89 Kbytes Page:10 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:401.97 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:330.84 Kbytes Page:2 Pages

ISC

无锡固电

Switching Regulator Applications

文件:240.24 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N-Channel MOS Type Switching Regulator Applications

文件:238.8 Kbytes Page:6 Pages

TOSHIBA

东芝

Switching Regulator Applications

文件:240.24 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N-Channel MOS Type Switching Regulator Applications

文件:238.57 Kbytes Page:6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:331.48 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:331.28 Kbytes Page:2 Pages

ISC

无锡固电

Silicon N-Channel MOS Type

文件:239.03 Kbytes Page:6 Pages

TOSHIBA

东芝

Switching Regulator Applications

文件:192.28 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N-Channel MOS Type Switching Regulator Applications

文件:179.68 Kbytes Page:6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:331.05 Kbytes Page:2 Pages

ISC

无锡固电

Switching Regulator Applications

文件:192.28 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N-Channel MOS Type Switching Regulator Applications

文件:213.16 Kbytes Page:6 Pages

TOSHIBA

东芝

Switching Regulator Applications

文件:198.81 Kbytes Page:6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:331.04 Kbytes Page:2 Pages

ISC

无锡固电

Switching Regulator Applications

文件:198.81 Kbytes Page:6 Pages

TOSHIBA

东芝

2SK390产品属性

  • 类型

    描述

  • 型号

    2SK390

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Cut Tape

更新时间:2025-12-25 16:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
2450+
TO263
8850
只做原装正品假一赔十为客户做到零风险!!
RENESAS/瑞萨
23+
TO263
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
RENESAS
2025+
TO263-3
3550
全新原厂原装产品、公司现货销售
RENESAS/瑞萨
22+
TO263-3
8000
原装正品支持实单
NEC
24+
TO-263
8866
RENESAS/瑞萨
22+
TO-263
12245
现货,原厂原装假一罚十!
RENESAS/瑞萨
24+
TO-263
39197
郑重承诺只做原装进口现货
NEC
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS/瑞萨
23+
TO263
6500
专注配单,只做原装进口现货

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